Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
Massabuau, F. C.-P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., Dawson, P., Oliver, R. A.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.05.2015)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.05.2015)
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Journal Article
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
Massabuau, F. C.-P., Trinh-Xuan, L., Lodié, D., Thrush, E. J., Zhu, D., Oehler, F., Zhu, T., Kappers, M. J., Humphreys, C. J., Oliver, R. A.
Published in Journal of applied physics (21.02.2013)
Published in Journal of applied physics (21.02.2013)
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Journal Article
The impact of growth parameters on trench defects in InGaN/GaN quantum wells
Massabuau, F. C.-P., Le Fol, A., Pamenter, S. K., Oehler, F., Kappers, M. J., Humphreys, C. J., Oliver, R. A.
Published in Physica status solidi. A, Applications and materials science (01.04.2014)
Published in Physica status solidi. A, Applications and materials science (01.04.2014)
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Journal Article
Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3
Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., Martin, R. W., Massabuau, F. C.-P.
Published in Applied physics letters (06.02.2023)
Published in Applied physics letters (06.02.2023)
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Journal Article
Directly correlated microscopy of trench defects in InGaN quantum wells
O'Hanlon, T.J., Massabuau, F C-P., Bao, A., Kappers, M.J., Oliver, R.A.
Published in Ultramicroscopy (01.12.2021)
Published in Ultramicroscopy (01.12.2021)
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Journal Article
Carrier localization in the vicinity of dislocations in InGaN
Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovács, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., Oliver, R. A.
Published in Journal of applied physics (07.01.2017)
Published in Journal of applied physics (07.01.2017)
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Journal Article
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
Massabuau, F.C.-P., Tartan, C.C., Traynier, R., Blenkhorn, W.E., Kappers, M.J., Dawson, P., Humphreys, C.J., Oliver, R.A.
Published in Journal of crystal growth (15.01.2014)
Published in Journal of crystal growth (15.01.2014)
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Journal Article
Optical and structural properties of dislocations in InGaN
Massabuau, F. C.-P., Horton, M. K., Pearce, E., Hammersley, S., Chen, P., Zielinski, M. S., Weatherley, T. F. K., Divitini, G., Edwards, P. R., Kappers, M. J., McAleese, C., Moram, M. A., Humphreys, C. J., Dawson, P., Oliver, R. A.
Published in Journal of applied physics (28.04.2019)
Published in Journal of applied physics (28.04.2019)
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Journal Article
Pure single-photon emission from an InGaN/GaN quantum dot
Holmes, M. J., Zhu, T., Massabuau, F. C.-P., Jarman, J., Oliver, R. A., Arakawa, Y.
Published in APL materials (01.06.2021)
Published in APL materials (01.06.2021)
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Journal Article
Structure and strain relaxation effects of defects in InxGa1−xN epilayers
Rhode, S L, Fu, W Y, C-P, Massabuau F, Kappers, M J, McAleese, C, Oehler, F, Humphreys, C J, Dusane, R O, Sahonta S–L
Published in Journal of applied physics (14.09.2014)
Published in Journal of applied physics (14.09.2014)
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Journal Article
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
Davies, M. J., Hammersley, S., Massabuau, F. C.-P., Dawson, P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.
Published in Journal of applied physics (07.02.2016)
Published in Journal of applied physics (07.02.2016)
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Journal Article
Atomic layer deposited α-Ga2O3 solar-blind photodetectors
Moloney, J, Tesh, O, Singh, M, Roberts, J W, Jarman, J C, Lee, L C, Huq, T N, Brister, J, Karboyan, S, Kuball, M, Chalker, P R, Oliver, R A, Massabuau, F C-P
Published in Journal of physics. D, Applied physics (20.11.2019)
Published in Journal of physics. D, Applied physics (20.11.2019)
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Journal Article
Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN
Smith, E.J.W., Piracha, A.H., Field, D., Pomeroy, J.W., Mackenzie, G.R., Abdallah, Z., Massabuau, F.C.-P., Hinz, A.M., Wallis, D.J., Oliver, R.A., Kuball, M., May, P.W.
Published in Carbon (New York) (15.10.2020)
Published in Carbon (New York) (15.10.2020)
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Journal Article
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Roberts, J.W., Chalker, P.R., Ding, B., Oliver, R.A., Gibbon, J.T., Jones, L.A.H., Dhanak, V.R., Phillips, L.J., Major, J.D., Massabuau, F.C.-P.
Published in Journal of crystal growth (15.12.2019)
Published in Journal of crystal growth (15.12.2019)
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Journal Article
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
Badcock, T. J., Dawson, P., Davies, M. J., Kappers, M. J., Massabuau, F. C.-P., Oehler, F., Oliver, R. A., Humphreys, C. J.
Published in Journal of applied physics (21.03.2014)
Published in Journal of applied physics (21.03.2014)
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Journal Article
Towards a better understanding of trench defects in InGaN/GaN quantum wells
Trinh-Xuan, L, Lodié, D, S-L Sahonta, Rhode, S, Thrush, E J, Oehler, F, Kappers, M J, Humphreys, C J, Oliver, R A
Published in Journal of physics. Conference series (01.01.2013)
Published in Journal of physics. Conference series (01.01.2013)
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Journal Article
Towards a better understanding of trench defects in InGaN/GaN quantum wells
Massabuau, F C-P, Trinh-Xuan, L, Lodié, D, Sahonta, S-L, Rhode, S, Thrush, E J, Oehler, F, Kappers, M J, Humphreys, C J, Oliver, R A
Published in Journal of physics. Conference series (29.11.2013)
Published in Journal of physics. Conference series (29.11.2013)
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Journal Article
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
Roberts, J.W., Jarman, J.C., Johnstone, D.N., Midgley, P.A., Chalker, P.R., Oliver, R.A., Massabuau, F.C-P.
Published in Journal of crystal growth (01.04.2018)
Published in Journal of crystal growth (01.04.2018)
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Journal Article