Electrical Properties of Dielectric and Ferroelectric Films Prepared by Plasma Enhanced Atomic Layer Deposition
Lee, Won-Jae, Shin, Woong-Chul, Chae, Byung-Gyu, Ryu, Sang-Ouk, You, In-Kyu, Cho, Seong Mok, Yu, Byoung-Gon, Shin, Byoung-Chul
Published in Integrated ferroelectrics (01.01.2002)
Published in Integrated ferroelectrics (01.01.2002)
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Journal Article
Fabrication of Ferroelectric Gate Memory Device Using BLT/HfO 2 /Si Gate Structure
Yoon, Sung-Min, You, In-Kyu, Lee, Nam-Yeal, Kim, Kwi-Dong, Cho, Seong-Mok, Ryu, Sang-Ouk, Shin, Woong-Chul, Choi, Kyu-Jung, Yu, Byoung-Gon
Published in Integrated ferroelectrics (01.02.2003)
Published in Integrated ferroelectrics (01.02.2003)
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Journal Article
Dependence of the properties of (SrxTi1−x)O3 thin films deposited by plasma-enhanced metal–organic chemical vapor deposition on electron cyclotron resonance plasma
Lee, Joon Sung, Song, Han Wook, Jun, Byung-Hyuk, Kwack, Dong Hwa, Yu, Byoung Gon, Jiang, Zhong-Tao, No, Kwangsoo
Published in Thin solid films (01.06.1997)
Published in Thin solid films (01.06.1997)
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Journal Article
Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi3.15La0.85Ti3O12 Thin Films
Lee, Nam-Yeal, Lee, Won-Jae, Ryu, Sang-Ouk, You, In-Kyu, Yoon, Sung-Min, Cho, Seong Mok, Shin, Woong-Chul, Yu, Byoung-Gon, Kim, Jindong
Published in Integrated ferroelectrics (01.02.2003)
Published in Integrated ferroelectrics (01.02.2003)
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Journal Article
A Serial Input/Output Circuit with 8 bit and 16 bit Selection Modes
Yang, Yil Suk, Kim, Jongdae, Roh, Tae Moon, Lee, Dae Woo, Koo, Jin Gun, Kim, Sang‐Gi, Park, Il Yong, Yu, Byoung Gon
Published in ETRI journal (01.12.2002)
Published in ETRI journal (01.12.2002)
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Journal Article
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer
Yoon, Sung-Min, Yang, Shin-Hyuk, Ko Park, Sang-Hee, Jung, Soon-Won, Cho, Doo-Hee, Byun, Chun-Won, Kang, Seung-Youl, Hwang, Chi-Sun, Yu, Byoung-Gon
Published in Journal of physics. D, Applied physics (21.12.2009)
Published in Journal of physics. D, Applied physics (21.12.2009)
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Journal Article
Effects of O2 annealing after etching SrBi2Ta2O9 thin film in Cl2/CF4/Ar plasma
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Conference Proceeding
Journal Article
Highly efficient green, blue, and white phosphorescent inverted organic light-emitting diodes by improving charge injection and balanceElectronic supplementary information (ESI) available. See DOI: 10.1039/c7tc02795h
Lee, Hyunkoo, Maeng, Min-Jae, Hong, Jong-Am, Najnin, Rokeya, Moon, Jaehyun, Cho, Hyunsu, Lee, Jonghee, Yu, Byoung-Gon, Park, Yongsup, Cho, Nam Sung
Year of Publication 05.10.2017
Year of Publication 05.10.2017
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Journal Article
Effect of high temperature post-annealing of La 0.7Sr 0.3MnO 3 films deposited by radio frequency magnetron sputtering on SiO 2/Si substrates heated at low temperature
Choi, Sun Gyu, Reddy, A. Sivasankar, Yu, Byoung-Gon, Yang, Woo Seok, Cheon, Sang Hoon, Park, Hyung-Ho
Published in Thin solid films (2010)
Published in Thin solid films (2010)
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Journal Article
Deformation Reduction of a MEMS Sensor by Stress Balancing of Multilayer
Woo Seok Yang, Cho, S.M., Hojun Ryu, Sang Hoon Cheon, Byoung Gon Yu, Chang Auck Choi
Published in 2008 Second International Conference on Sensor Technologies and Applications (sensorcomm 2008) (01.08.2008)
Published in 2008 Second International Conference on Sensor Technologies and Applications (sensorcomm 2008) (01.08.2008)
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Conference Proceeding
Novel Process for the Electrodes of Microbolometer
Hojun Ryu, Seong-Mok Cho, Woo Seok Yang, Sang Hoon Cheon, Byoung-Gon Yu
Published in 2007 International Conference on Sensor Technologies and Applications (SENSORCOMM 2007) (01.10.2007)
Published in 2007 International Conference on Sensor Technologies and Applications (SENSORCOMM 2007) (01.10.2007)
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Conference Proceeding
A resistive switch device based on SbTeN chalcogenide film
Young Sam Park, Seung-Yun Lee, Sung-Min Yoon, Soon Won Jung, Byoung Gon Yu
Published in 2008 IEEE Silicon Nanoelectronics Workshop (01.06.2008)
Published in 2008 IEEE Silicon Nanoelectronics Workshop (01.06.2008)
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Conference Proceeding
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al 2 O 3 and ferroelectric polymer
Yoon, Sung-Min, Yang, Shin-Hyuk, Ko Park, Sang-Hee, Jung, Soon-Won, Cho, Doo-Hee, Byun, Chun-Won, Kang, Seung-Youl, Hwang, Chi-Sun, Yu, Byoung-Gon
Published in Journal of physics. D, Applied physics (21.12.2009)
Published in Journal of physics. D, Applied physics (21.12.2009)
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Journal Article
Thermal Treatment of Ag/Ag-Doped (Ge[sub 45]Te[sub 55])[sub 0.7]N[sub 0.3] Electrolyte Films in Switching Characteristics of Programmable Metallization Cell Memory
Lee, Soo-Jin, Yoon, Soon-Gil, Yoon, Sung-Min, Lee, Nam-Yeal, Yu, Byoung-Gon
Published in Journal of the Electrochemical Society (2007)
Published in Journal of the Electrochemical Society (2007)
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Journal Article
Phase transition characteristics and device performance of Si-doped Ge 2 Sb 2 Te 5
Park, Sung-Jin, Kim, In-Soo, Kim, Sang-Kyun, Yoon, Sung-Min, Yu, Byoung-Gon, Choi, Se-Young
Published in Semiconductor science and technology (01.10.2008)
Published in Semiconductor science and technology (01.10.2008)
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Journal Article