Operating principle of dual collector magnetotransistors studied by two-dimensional simulation
Riccobene, C., Wachutka, G., Burgler, J., Baltes, H.
Published in IEEE transactions on electron devices (01.07.1994)
Published in IEEE transactions on electron devices (01.07.1994)
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Journal Article
Operating principle of dual collector magnetotransistors studied by two-dimensional simulation
Riccobene, C., Wachutka, G., Burgler, J., Baltes, H.
Published in IEEE transactions on electron devices (01.01.1994)
Published in IEEE transactions on electron devices (01.01.1994)
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Journal Article
Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results
Bauer, F., Halder, E., Hofmann, K., Haddon, H., Roggwiller, P., Stockmeier, T., Burgler, J., Fichtner, W., Muller, S., Westermann, M., Moret, J.-M., Vuilleumier, R.
Published in IEEE transactions on electron devices (01.07.1991)
Published in IEEE transactions on electron devices (01.07.1991)
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Journal Article
Three-dimensional simulation of complex semiconductor device structures
Burgler, J., Conti, P., Heiser, G., Paschedag, S., Fichtner, W.
Published in International Symposium on VLSI Technology, Systems and Applications (1989)
Published in International Symposium on VLSI Technology, Systems and Applications (1989)
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