Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires
Lari, L., Walther, T., Gass, M.H., Geelhaar, L., Chèze, C., Riechert, H., Bullough, T.J., Chalker, P.R.
Published in Journal of crystal growth (15.07.2011)
Published in Journal of crystal growth (15.07.2011)
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Journal Article
Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE
Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., Dimitrakopulos, G. P., Kehagias, Th, Komninou, Ph, Karakostas, Th, Chèze, C., Geelhaar, L., Riechert, H.
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
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Conference Proceeding
The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
Chalker, P R, Bullough, T J, Gass, M, Thomas, S, Joyce, T B
Published in Journal of physics. Condensed matter (11.08.2004)
Published in Journal of physics. Condensed matter (11.08.2004)
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Journal Article
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker, P.R, Davock, H, Thomas, S, Joyce, T.B, Bullough, T.J, Potter, R.J, Balkan, N
Published in Journal of crystal growth (01.11.2001)
Published in Journal of crystal growth (01.11.2001)
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Journal Article
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
Thomas, S, White, S, Chalker, P R, Bullough, T J, Joyce, T B
Published in Journal of materials science. Materials in electronics (01.09.2002)
Published in Journal of materials science. Materials in electronics (01.09.2002)
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Journal Article
Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth
Lari, L., Murray, R.T., Bullough, T.J., Chalker, P.R., Gass, M., Chèze, C., Geelhaar, L., Riechert, H.
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2008)
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2008)
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Conference Proceeding
A calibration of the H-CAS stretch mode in GaAs
Davidson, B R, Newman, R C, Joyce, T B, Bullough, T J
Published in Semiconductor science and technology (01.03.1996)
Published in Semiconductor science and technology (01.03.1996)
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Beam equivalent pressure measurements in chemical beam epitaxy
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Conference Proceeding
The microstructure and thermal stability of CBE grown heavily carbon doped GaAs
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Journal Article
Conference Proceeding
GaN, AlGaN, HfO2 based radial heterostructure nanowires
Lari, L, Walther, T, Black, K, Murray, R T, Bullough, T J, Chalker, P R, Chèze, C, Geelhaar, L, Riechert, H
Published in Journal of physics. Conference series (01.02.2010)
Published in Journal of physics. Conference series (01.02.2010)
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Journal Article
A comparison of the transitory periods in GaAs and AlGaAs CBE growth
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Journal Article
Conference Proceeding
Raman spectroscopic study of the H-CAs complex in epitaxial AlAs
Wagner, J, Pritchard, R E, Davidson, B R, Newman, R C, Bullough, T J, Joyce, T B, Button, C, Roberts, J S
Published in Semiconductor science and technology (01.05.1995)
Published in Semiconductor science and technology (01.05.1995)
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Journal Article
XeCl excimer laser assisted CBE growth of GaAs
Fareell, T., Armstrong, J.V., Joyce, T.B., Bullough, T.J., Kightley, P., Goodhew, P.J.
Published in Journal of crystal growth (01.05.1992)
Published in Journal of crystal growth (01.05.1992)
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Conference Proceeding
CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors
JOYCE, T. B, BULLOUGH, T. J, KIGHTLEY, P, KIELY, C. J, XING, Y. R, GOODHEW, P. J
Published in Journal of crystal growth (01.05.1992)
Published in Journal of crystal growth (01.05.1992)
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