Further optimization of VLS localized epitaxy for deeper 4H‐SiC p–n junctions
Sejil, S., Lazar, M., Carole, D., Brylinski, C., Planson, D., Ferro, G., Raynaud, C.
Published in Physica status solidi. A, Applications and materials science (01.04.2017)
Published in Physica status solidi. A, Applications and materials science (01.04.2017)
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Journal Article
Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport
Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Thierry-Jebali, N., Brosselard, P., Planson, D., Brylinski, C., Ferro, G.
Published in Thin solid films (02.12.2013)
Published in Thin solid films (02.12.2013)
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Journal Article
Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers
Defives, D., Noblanc, O., Dua, C., Brylinski, C., Barthula, M., Aubry-Fortuna, V., Meyer, F.
Published in IEEE transactions on electron devices (01.03.1999)
Published in IEEE transactions on electron devices (01.03.1999)
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Journal Article
Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase
Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Planson, D., Brylinski, C., Ferro, G.
Published in Diamond and related materials (01.05.2013)
Published in Diamond and related materials (01.05.2013)
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Journal Article
Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity
Sghaier, N., Bluet, J.-M., Souifi, A., Guillot, G., Morvan, E., Brylinski, C.
Published in IEEE transactions on electron devices (01.02.2003)
Published in IEEE transactions on electron devices (01.02.2003)
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Journal Article
Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)
Amy, F, Enriquez, H, Soukiassian, P, Storino, P F, Chabal, Y J, Mayne, A J, Dujardin, G, Hwu, Y K, Brylinski, C
Published in Physical review letters (07.05.2001)
Published in Physical review letters (07.05.2001)
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Journal Article
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices
Lazar, M., Carole, D., Raynaud, C., Ferro, G., Sejil, S., Laariedh, F., Brylinski, C., Planson, D., Morel, H.
Published in 2015 International Semiconductor Conference (CAS) (01.10.2015)
Published in 2015 International Semiconductor Conference (CAS) (01.10.2015)
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Conference Proceeding
Journal Article
Self-heating effects in silicon carbide MESFETs
Royet, A.S., Ouisse, T., Cabon, B., Noblanc, O., Arnodo, C., Brylinski, C.
Published in IEEE transactions on electron devices (01.11.2000)
Published in IEEE transactions on electron devices (01.11.2000)
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Journal Article
Nickel based ohmic contacts on SiC
Marinova, Ts, Kakanakova-Georgieva, A., Krastev, V., Kakanakov, R., Neshev, M., Kassamakova, L., Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C., Pecz, B., Radnoczi, G., Vincze, Gy
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1997)
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Journal Article
Characterization of ohmic and Schottky contacts on SiC
Kakanakova-Georgieva, A., Marinova, Ts, Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C.
Published in Thin solid films (1999)
Published in Thin solid films (1999)
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Journal Article
Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs
Noblanc, O, Arnodo, C, Dua, C, Chartier, E, Brylinski, C
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
Electrical characterization of inhomogeneous Ti/4H–SiC Schottky contacts
Defives, D, Noblanc, O, Dua, C, Brylinski, C, Barthula, M, Meyer, F
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
TEM study of Ni and Ni2Si ohmic contacts to SiC
Pécz, B., Radnóczi, G., Cassette, S., Brylinski, C., Arnodo, C., Noblanc, O.
Published in Diamond and related materials (01.08.1997)
Published in Diamond and related materials (01.08.1997)
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Journal Article
Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC
Defives, D., Durand, O., Wyczisk, F., Noblanc, O., Brylinski, C., Meyer, F.
Published in Microelectronic engineering (01.03.2001)
Published in Microelectronic engineering (01.03.2001)
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Journal Article
Conference Proceeding
Silicon carbide MESFETs performances and application in broadcast power amplifiers
Temcamani, F., Pouvil, P., Noblanc, O., Brylinski, C., Bannelier, P., Darges, B., Prigent, J.P.
Published in 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) (2001)
Published in 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) (2001)
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Conference Proceeding
Journal Article
Microwave power MESFET on 4H-SiC
Noblanc, O., Chartier, E., Arnodo, C., Brylinski, C.
Published in Diamond and related materials (01.08.1997)
Published in Diamond and related materials (01.08.1997)
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Journal Article