Temperature dependence of the Al-fill processes for submicron-via structures
Weber, S.J, Iggulden, R.C, Schnabel, R.F, Weigand, P, Restaino, D.D, Brodsky, S.B, Mehter, E.A, Clevenger, L.A
Published in Thin solid films (04.05.1998)
Published in Thin solid films (04.05.1998)
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Conference Proceeding
Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology
Dori, L., Megdanis, A., Brodsky, S.B., Arienzo, M., Cohen, S.A.
Published in Thin solid films (1990)
Published in Thin solid films (1990)
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Journal Article
Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
Moy, D., Basavaiah, S., Chuang, C.T., Li, G.P., Hackbarth, E., Brodsky, S.B., Polcari, M.R.
Published in Solid-state electronics (01.05.1988)
Published in Solid-state electronics (01.05.1988)
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Journal Article
Sub-400-ps ISL circuits
Ching-Te Chuang, Li, G.P., Moy, D., Hackbarth, E., Cressler, J.D., Brodsky, S.B., Basavaiah, S.
Published in IEEE electron device letters (01.10.1986)
Published in IEEE electron device letters (01.10.1986)
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