Antibody Neutralization of Vascular Endothelial Growth Factor Inhibits Wound Granulation Tissue Formation
Howdieshell, Thomas R., Callaway, Dianne, Webb, Whitney L., Gaines, Michael D., Procter, Charles D., Sathyanarayana, Pollock, Jennifer S., Brock, Tommy L., McNeil, Paul L.
Published in The Journal of surgical research (01.04.2001)
Published in The Journal of surgical research (01.04.2001)
Get full text
Journal Article
A D-band monolithic fundamental oscillator using InP-based HEMT's
Kwon, Y., Pavlidis, D., Brock, T.L., Streit, D.C.
Published in IEEE transactions on microwave theory and techniques (01.12.1993)
Published in IEEE transactions on microwave theory and techniques (01.12.1993)
Get full text
Journal Article
Monolithically integrated InP-based front-end photoreceivers
Zebda, Y., Lai, R., Bhattacharya, P., Pavlidis, D., Berger, P.R., Brock, T.L.
Published in IEEE transactions on electron devices (01.06.1991)
Published in IEEE transactions on electron devices (01.06.1991)
Get full text
Journal Article
DC and RF characterization of short-gate-length InGaAs/InAlAs MODFETs
Ketterson, A.A., Laskar, J., Brock, T.L., Adesida, I., Kolodzey, J., Aina, O.A., Hier, H.
Published in IEEE transactions on electron devices (01.10.1989)
Published in IEEE transactions on electron devices (01.10.1989)
Get full text
Journal Article
Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS
Adesida, I., Ketterson, A.A., Brock, T.L., Laskar, J., Kolodzey, J., Aina, O., Hier, H.
Published in Microelectronic engineering (1989)
Published in Microelectronic engineering (1989)
Get full text
Journal Article
Characteristics of 0.8-and 0.2-mu m gate length In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP(0.53 < e1 > x < /e1 > 0.70) modulation-doped field-effect transistorsat cryogenic temperatures
Lai, R, Bhattacharya, P K, Yang, D, Brock, T L, Alterovitz, S A, Downey, A N
Published in IEEE transactions on electron devices (01.10.1992)
Published in IEEE transactions on electron devices (01.10.1992)
Get full text
Journal Article
Characteristics of 0.8- and 0.2-μm gate length Inxa1-χAs/In0.52Al0.48As/InP (0.53 ≤ x≤ 0.70) modulation-doped field-effect transistors at cryogenic temperatures
LAI, R, BHATTACHARYA, P. K, YANG, D, BROCK, T. L, ALTEROVITZ, S. A, DOWNEY, A. N
Published in IEEE transactions on electron devices (1992)
Get full text
Published in IEEE transactions on electron devices (1992)
Journal Article