Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
Xinwen Hu, Karmarkar, A.P., Bongim Jun, Fleetwood, D.M., Schrimpf, R.D., Geil, R.D., Weller, R.A., White, B.D., Bataiev, M., Brillson, L.J., Mishra, U.K.
Published in IEEE transactions on nuclear science (01.12.2003)
Published in IEEE transactions on nuclear science (01.12.2003)
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Journal Article
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
Brillson, L.J., Dong, Y., Doutt, D., Look, D.C., Fang, Z.-Q.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Journal Article
Conference Proceeding
Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence
White, B.D., Bataiev, M., Goss, S.H., Hu, X., Karmarkar, A., Fleetwood, D.M., Schrimpf, R.D., Schaff, W.J., Brillson, L.J.
Published in IEEE transactions on nuclear science (01.12.2003)
Published in IEEE transactions on nuclear science (01.12.2003)
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Journal Article
Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC
Gao, M., Tsukimoto, S., Goss, S.H., Tumakha, S.P., Onishi, T., Murakami, M., Brillson, L.J.
Published in Journal of electronic materials (01.04.2007)
Published in Journal of electronic materials (01.04.2007)
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Journal Article
Proton-induced damage in gallium nitride-based Schottky diodes
Karmarkar, A.P., White, B.D., Buttari, D., Fleetwood, D.M., Schrimpf, R.D., Weller, R.A., Brillson, L.J., Mishra, U.K.
Published in IEEE transactions on nuclear science (01.12.2005)
Published in IEEE transactions on nuclear science (01.12.2005)
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Journal Article
Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy
White, B.D., Bataiev, M., Brillson, L.J., Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.I., Dettmer, R.W., Schaff, W.J., Champlain, J.G., Mishra, A.K.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement
Bradley, S.T., Young, A.P., Brillson, L.J., Murphy, M.J., Schaff, W.J., Eastman, L.E.
Published in IEEE transactions on electron devices (01.03.2001)
Published in IEEE transactions on electron devices (01.03.2001)
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Journal Article
Low-energy electron-excited nanoluminescence studies of GaN and related materials
Brillson, L.J., Bradley, S.T., Goss, S.H., Sun, X., Murphy, M.J., Schaff, W.J., Eastman, L.F., Look, D.C., Molnar, R.J., Ponce, F.A., Ikeo, N., Sakai, Y.
Published in Applied surface science (08.05.2002)
Published in Applied surface science (08.05.2002)
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Journal Article
Conference Proceeding
Spatially-resolved cathodoluminescence spectroscopy of ZnO defects
Brillson, L.J., Ruane, W.T., Gao, H., Zhang, Y., Luo, J., von Wenckstern, H., Grundmann, M.
Published in Materials science in semiconductor processing (01.01.2017)
Published in Materials science in semiconductor processing (01.01.2017)
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Journal Article
Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces
Brillson, L.J, Young, A.P, Jessen, G.H, Levin, T.M, Bradley, S.T, Goss, S.H, Bae, J, Ponce, F.A, Murphy, M.J, Schaff, W.J, Eastman, L.F
Published in Applied surface science (15.05.2001)
Published in Applied surface science (15.05.2001)
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Journal Article
Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation
White, B.D., Brillson, L.J., Lee, S.C., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T., Lee, Y.-M., Lucovsky, G.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
Nanostructure growth-induced defect formation and band bending at ZnO surfaces
Merz, T.A., Doutt, D.R., Bolton, T., Dong, Y., Brillson, L.J.
Published in Surface science (01.05.2011)
Published in Surface science (01.05.2011)
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Journal Article
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap Layers
Karmarkar, A.P, Jun, Bongim, Fleetwood, D.M, Schrimpf, R.D, Weller, R.A, White, B.D, Brillson, L.J, Mishra, U.K
Published in IEEE transactions on nuclear science (01.12.2004)
Published in IEEE transactions on nuclear science (01.12.2004)
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Journal Article
Advances in understanding metal-semiconductor interfaces by surface science techniques
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Book Review
Journal Article
Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces
Brillson, L.J., Mosbacker, H.L., Hetzer, M.J., Strzhemechny, Y., Look, D.C., Cantwell, G., Zhang, J., Song, J.J.
Published in Applied surface science (15.10.2008)
Published in Applied surface science (15.10.2008)
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Journal Article
Conference Proceeding
Maximum: A scanning photoelectron microscope at Aladdin
Cerrina, F., Margaritondo, G., Underwood, J.H., Hettrick, M., Green, M.A., Brillson, L.J., Franciosi, A., Höchst, H., Deluca, P.M., Gould, M.N.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.04.1988)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.04.1988)
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Journal Article
Near-surface defect distributions in Cu(In,Ga)Se2
Rockett, A., Liao, D., Heath, J.T., Cohen, J.D., Strzhemechny, Y.M., Brillson, L.J., Ramanathan, K., Shafarman, W.N.
Published in Thin solid films (01.05.2003)
Published in Thin solid films (01.05.2003)
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