A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control
Dietrich, S., Angerbauer, M., Ivanov, M., Gogl, D., Hoenigschmid, H., Kund, M., Liaw, C., Markert, M., Symanczyk, R., Altimime, L., Bournat, S., Mueller, G.
Published in IEEE journal of solid-state circuits (01.04.2007)
Published in IEEE journal of solid-state circuits (01.04.2007)
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Journal Article
Conference Proceeding
Signal-Margin-Screening for Multi-Mb MRAM
Honigschmid, H., Beer, P., Bette, A., Dittrich, R., Gardic, F., Gogl, D., Lammers, S., Schmid, J., Altimime, L., Bournat, S., Muller, G.
Published in 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers (2006)
Published in 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers (2006)
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Conference Proceeding
Conductive Bridging Memory Development from Single Cells to 2Mbit Memory Arrays
Symanczyk, R., Dittrich, R., Keller, J., Kund, M., Muller, G., Ruf, B., Albarede, P.-H., Bournat, S., Bouteille, L., Duch, A.
Published in 2007 Non-Volatile Memory Technology Symposium (01.11.2007)
Published in 2007 Non-Volatile Memory Technology Symposium (01.11.2007)
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Conference Proceeding
A Non-Volatile 2Mbit CBRAM Memory Core Featuring Advanced Read and Program Control
Honigschmid, H., Angerbauer, M., Dietrich, S., Dimitrova, M., Gogl, D., Liaw, C., Markert, M., Symanczyk, R., Altimime, L., Bournat, S., Muller, G.
Published in 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers (2006)
Published in 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers (2006)
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Conference Proceeding
Time Discrete Voltage Sensing and Iterative Programming Control for a 4F2Multilevel CBRAM
Schrogmeier, P., Angerbauer, M., Dietrich, S., Ivanov, M., Honigschmid, H., Liaw, C., Markert, M., Symanczyk, R., Altimime, L., Bournat, S., Muller, G.
Published in 2007 IEEE Symposium on VLSI Circuits (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Circuits (01.06.2007)
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Conference Proceeding
Thermal Select MRAM with a 2-bit Cell Capability for beyond 65 nm Technology Node
Leuschner, R., Klostermann, U.K., Park, H., Dahmani, F., Dittrich, R., Grigis, C., Hernan, K., Mege, S., Park, C., Clech, M.C., Lee, G.Y., Bournat, S., Altimime, L., Mueller, G.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding
Tread, the rolling noise of which is reduced
MARTIN DIDIER MICHEL, QUANTINET BENJAMIN, FOUCHER BENOIT, BOURNAT ALEXIS
Year of Publication 03.04.2013
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Year of Publication 03.04.2013
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