Very slow charge trapping and release in ion implanted GaAs [MESFETs]
Chiu, C.-H., Boroumand, F.A., Swanson, J.G.
Published in IEEE transactions on electron devices (01.03.2000)
Published in IEEE transactions on electron devices (01.03.2000)
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Journal Article
Resonant and negative resistive currents between isolated GaAs device structures
Boroumand, F.A., Reilly, M.A., Swanson, J.G.
Published in 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) (1999)
Published in 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) (1999)
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Conference Proceeding
Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures
Boroumand, F.A., Khalid, A.H., Hopkinson, M., Swanson, J.G.
Published in Proceedings of Semiconducting and Semi-Insulating Materials Conference (1996)
Published in Proceedings of Semiconducting and Semi-Insulating Materials Conference (1996)
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Conference Proceeding