Effect of fluorine implantation dose on boron thermal diffusion in silicon
El Mubarek, H. A. W., Bonar, J. M, Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., Wang, Y., Hemment, P. L. F., Price, R., Zhang, J., Ward, P.
Published in Journal of applied physics (15.10.2004)
Published in Journal of applied physics (15.10.2004)
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Journal Article
SiGe HBTs on bonded SOI incorporating buried silicide layers
Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S., Ashburn, P.
Published in IEEE transactions on electron devices (01.03.2005)
Published in IEEE transactions on electron devices (01.03.2005)
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Journal Article
Structurally induced optical transitions in Ge-Si superlattices
Pearsall, TP, Bevk, J, Feldman, LC, Bonar, JM, Mannaerts, JP, Ourmazd, A
Published in Physical review letters (16.02.1987)
Published in Physical review letters (16.02.1987)
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Journal Article
Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator
Kanjanachuchai, S, Bonar, J M, Ahmed, H
Published in Semiconductor science and technology (01.12.1999)
Published in Semiconductor science and technology (01.12.1999)
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Journal Article
Low-pressure chemical vapour deposition growth of epitaxial silicon selective to silicon nitride
Lloyd, N.S, Bonar, J.M
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Journal Article
Conference Proceeding
Confined epitaxial growth by low-pressure chemical vapor deposition
OSMAN, K, LLOYD, N. S, BONAR, J. M, KEMHADJIAN, H. A, BAGNALL, D. M, HAMEL, J. S
Published in Journal of materials science. Materials in electronics (01.05.2003)
Published in Journal of materials science. Materials in electronics (01.05.2003)
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Conference Proceeding
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Non-selective growth of SiGe heterojunction bipolar trasistor[transistor] layers at 700°C with dual control of n- and p-type dopant profiles
EL MUBAREK, H. A. W, BONAR, J. M, ASHBURN, P, WANG, Y, HEMMENT, P, BUIU, O, HALL, S
Published in Journal of materials science. Materials in electronics (01.05.2003)
Published in Journal of materials science. Materials in electronics (01.05.2003)
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Antimony and boron diffusion in SiGe and Si under the influence of injected point defects
Bonar, J M, Willoughby, A F; W, Dan, A H, Mcgregor, B M, Lerch, W, Loeffelmacher, D, Cooke, G A, Dowsett, M G
Published in Journal of materials science. Materials in electronics (01.06.2001)
Published in Journal of materials science. Materials in electronics (01.06.2001)
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Journal Article
Single-hole tunnelling in SiGe nanostructures
Kanjanachuchai, S., Bonar, J.M., Parker, G.J., Ahmed, H.
Published in Microelectronic engineering (1999)
Published in Microelectronic engineering (1999)
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Journal Article
Conference Proceeding
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
Bonar, J M, Schiz, J, Ashburn, P
Published in Journal of materials science. Materials in electronics (01.07.1999)
Published in Journal of materials science. Materials in electronics (01.07.1999)
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Journal Article
Point defect redistribution in Si1-xGex alloys
Paine, A D; N, Willoughby, A F; W, Bonar, J M
Published in Journal of materials science. Materials in electronics (01.07.1999)
Published in Journal of materials science. Materials in electronics (01.07.1999)
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Journal Article
110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression
KHAM, M. N, EL MUBAREK, H. A. W, BONAR, J. M, ASHBURN, Peter, WARD, P, FIORE, L, PETRALIA, R, ALEMANNI, C, MESSINA, A
Published in IEEE transactions on electron devices (01.03.2006)
Published in IEEE transactions on electron devices (01.03.2006)
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Journal Article
Boron diffusion across silicon–silicon germanium boundaries
Lever, R. F., Bonar, J. M., Willoughby, A. F. W.
Published in Journal of applied physics (15.02.1998)
Published in Journal of applied physics (15.02.1998)
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Journal Article
Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si1-xGex
EL MUBAREK, H. A. W, KARUNARATNE, M, BONAR, J. M, DILLIWAY, G. D, WANG, Y, HEMMENT, P. L. F, WILLOUGHBY, A. F, ASHBURN, P
Published in IEEE transactions on electron devices (01.04.2005)
Published in IEEE transactions on electron devices (01.04.2005)
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Journal Article
Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition
ZHANG, W, LLOYD, N. S, OSMAN, K, BONAR, J. M, HAMEL, J. S, BAGNALL, D. M
Published in Microelectronic engineering (01.06.2004)
Published in Microelectronic engineering (01.06.2004)
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