Three-Dimensional Simulation of Dopant-Fluctuation-Induced Threshold Voltage Dispersion in Nonplanar MOS Structures Targeting Flash EEPROM Transistors
KIM, Bomsoo, KWON, Wookhyun, BAEK, Chang-Ki, JIN, Seonghoon, SONG, Yunheub, KIM, Dae M
Published in IEEE transactions on electron devices (01.06.2008)
Published in IEEE transactions on electron devices (01.06.2008)
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Journal Article
Investigation of Fixed Oxide Charge and Fin Profile Effects on Bulk FinFET Device Characteristics
Bomsoo Kim, Dong-Il Bae, Zeitzoff, Peter, Xin Sun, Standaert, Theodorus E., Tripathi, Neeraj, Scholze, Andreas, Oldiges, Philip J., Dechao Guo, Huiling Shang, Kang-Ill Seo
Published in IEEE electron device letters (01.12.2013)
Published in IEEE electron device letters (01.12.2013)
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Journal Article
Correction to "Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells"
Bomsoo Kim, Wook-Hyun Kwon, Chang-Ki Baek, Younghwan Son, Chan-Kwang Park, Kinam Kim, Kim, D.M.
Published in IEEE transactions on electron devices (01.04.2007)
Published in IEEE transactions on electron devices (01.04.2007)
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Journal Article
Reliable extraction of cycling induced interface states implementing realistic P/E stresses in reference cell: comparison with flash memory cell
Chang-Ki Baek, Bomsoo Kim, Son, Y., Wookhyun Kwon, Chan-Kwang Park, Park, Y.J., Hong Shick Min, Kim, D.M.
Published in IEEE electron device letters (01.03.2006)
Published in IEEE electron device letters (01.03.2006)
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Journal Article
Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells: Optimized Erase and Cell Shrinkage
Kim, Bomsoo, Baek, Chang-Ki, Kwon, Wookhyun, Jeong, Yoon-Ha, Kim, Dae M.
Published in Japanese Journal of Applied Physics (15.12.2004)
Published in Japanese Journal of Applied Physics (15.12.2004)
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Journal Article
(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations
Lu, Darsen, Morin, Pierre, Sahu, Bhagawan, Hook, Terence B, Hashemi, Pouya, Scholze, Andreas, Kim, Bomsoo, Kerber, Pranita, Khakifirooz, Ali, Oldiges, Philip, Rim, Ken, Doris, Bruce
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Correction to 'Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells&rdquo
Kim, Bomsoo, Kwon, Wook-Hyun, Baek, Chang-Ki, Son, Younghwan, Park, Chan-Kwang, Kim, Kinam, Kim, D M
Published in IEEE transactions on electron devices (01.04.2007)
Published in IEEE transactions on electron devices (01.04.2007)
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Journal Article
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Younghwan Son, Chang-Ki Baek, Bomsoo Kim, In-Shik Han, Tae-Gyu Goo, Ooksang You, Wonho Choi, Hee-Hwan Ji, Hi-Deok Lee, Kim, D.M.
Published in 2006 IEEE Nanotechnology Materials and Devices Conference (01.10.2006)
Published in 2006 IEEE Nanotechnology Materials and Devices Conference (01.10.2006)
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Conference Proceeding
High Speed, Low Power Programming in 0.17µm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
Baek, Chang-Ki, Song, Yunheub, Kim, Bomsoo, Quan, Wu-yun, Park, Young June, Min, Hong Shick, Kim, Dae M.
Published in Japanese Journal of Applied Physics (01.02.2004)
Published in Japanese Journal of Applied Physics (01.02.2004)
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Journal Article
(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations
Lu, Darsen, Morin, Pierre, Sahu, Bhagawan, Hook, Terence B, Hashemi, Pouya, Scholze, Andreas, Kim, Bomsoo, Kerber, Pranita, Khakifirooz, Ali, Oldiges, Philip, Rim, Ken, Doris, Bruce
Published in Meeting abstracts (Electrochemical Society) (05.08.2014)
Published in Meeting abstracts (Electrochemical Society) (05.08.2014)
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Journal Article