Porosity and pore size distributions of porous silicon layers
HERINO, R, BOMCHIL, G, BARLA, K, BERTRAND, C, GINOUX, J. L
Published in Journal of the Electrochemical Society (01.08.1987)
Published in Journal of the Electrochemical Society (01.08.1987)
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Journal Article
Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers
Bsiesy, A., Vial, J.C., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Romestain, R., Wasiela, A., Halimaoui, A., Bomchil, G.
Published in Surface science (01.08.1991)
Published in Surface science (01.08.1991)
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Journal Article
Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction
Barla, K., Herino, R., Bomchil, G., Pfister, J.C., Freund, A.
Published in Journal of crystal growth (01.01.1984)
Published in Journal of crystal growth (01.01.1984)
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Journal Article
Silicon-on-insulator: materials aspects and technological applications
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Conference Proceeding
Porous silicon: material properties, visible photo- and electroluminescence
Bomchil, G., Halimaoui, A., Sagnes, I., Badoz, P.A., Berbezier, I., Perret, P., Lambert, B., Vincent, G., Garchery, L., Regolini, J.L.
Published in Applied surface science (01.01.1993)
Published in Applied surface science (01.01.1993)
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Journal Article
Conference Proceeding
Pore size distribution in porous silicon studied by adsorption isotherms
BOMCHIL, G, HERINO, R, BARLA, K, PFISTER, J. C
Published in Journal of the Electrochemical Society (01.07.1983)
Published in Journal of the Electrochemical Society (01.07.1983)
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Journal Article
Silicon on insulator structures obtained by epitaxial growth of silicon over porous silicon
OULES, C, HALIMAOUI, A, REGOLINI, J. L, PERIO, A, BOMCHIL, G
Published in Journal of the Electrochemical Society (01.12.1992)
Published in Journal of the Electrochemical Society (01.12.1992)
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Journal Article
X-ray topographic characterization of porous silicon layers
Barla, K., Bomchil, G., Herino, R., Pfister, J.C., Baruchel, J.
Published in Journal of crystal growth (01.01.1984)
Published in Journal of crystal growth (01.01.1984)
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Journal Article
SAXS study of the influence of the porous silicon morphology on the photoluminescence efficiency
Goudeau, Ph, Naudon, A., Halimaoui, A., Bomchil, G.
Published in Journal of luminescence (01.11.1993)
Published in Journal of luminescence (01.11.1993)
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Journal Article
Study of the diffusion path during the lateral growth in the salicide process
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Journal Article
Conference Proceeding
Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor
Regolini, J.L., Bensahel, D., Bomchil, G., Mercier, J.
Published in Applied surface science (01.09.1989)
Published in Applied surface science (01.09.1989)
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Journal Article
Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology
REGOLINI, J. L, MASTROMATTEO, E, GAUNEAU, M, MERCIER, J, DUTARTRE, D, BOMCHIL, G, BERNARD, C, MADAR, R, BENSAHEL, D
Published in Applied surface science (01.11.1991)
Published in Applied surface science (01.11.1991)
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Conference Proceeding
Journal Article
Influence of boron on WSi2 formation by direct reaction between tungsten and silicon
Torres, J., Oberlin, J.C., Stuck, R., Bourhila, N., Palleau, J., Göltz, G., Bomchil, G.
Published in Applied surface science (01.09.1989)
Published in Applied surface science (01.09.1989)
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Journal Article
The Structure and Dynamics of Methane Adsorbed on Graphite [and Discussion]
G. Bomchil, A. Huller, T. Rayment, S. J. Roser, M. V. Smalley, R. K. Thomas, J. W. White, A. D. Buckingham
Published in Philosophical transactions. Biological sciences (20.11.1980)
Published in Philosophical transactions. Biological sciences (20.11.1980)
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