Dislocation interaction of layers in the Ge/Ge-seed/Ge Si1−/Si(0 0 1) (x∼ 0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V., Vasilenko, A.P.
Published in Acta materialia (01.08.2013)
Published in Acta materialia (01.08.2013)
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Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V.
Published in Journal of crystal growth (01.02.2018)
Published in Journal of crystal growth (01.02.2018)
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Journal Article
Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V., Vasilenko, A.P.
Published in Acta materialia (01.08.2013)
Published in Acta materialia (01.08.2013)
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Journal Article
New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate
Alperovich, V.L., Bolkhovityanov, Yu.B., Paulish, A.G., Terekhov, A.S.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (08.03.1994)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (08.03.1994)
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Edge misfit dislocations in [Ge.sub.x][Si.sub.1-x]/Si interlayer in their formation
Bolkhovityanov, Yu.B, Gutakovskii, A.K, Deryabin, A.S, Sokolov, L.V
Published in Physics of the solid state (01.09.2011)
Published in Physics of the solid state (01.09.2011)
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Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface
Bolkhovityanov, Yu. B., Vasilenko, A. P., Gutakovskii, A. K., Deryabin, A. S., Putyato, M. A., Sokolov, L. V.
Published in Physics of the solid state (01.10.2011)
Published in Physics of the solid state (01.10.2011)
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Journal Article
Molecular beam epitaxy of silicon–germanium nanostructures
Pchelyakov, O.P, Bolkhovityanov, Yu.B, Dvurechenskii, A.V, Nikiforov, A.I, Yakimov, A.I, Voigtländer, B
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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Heterostructures Ge xSi 1− x/Si(001) ( x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Revenko, M.A., Sokolov, L.V.
Published in Thin solid films (2004)
Published in Thin solid films (2004)
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