Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
Bohyama, Shinya, Miyake, Hideto, Hiramatsu, Kazumasa, Tsuchida, Yoshihiko, Maeda, Takayoshi
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
DISTRIBUTION OF THREADING DISLOCATIONS IN EPITAXIAL LATERAL OVERGROWTH GaN BY HYDRIDE VAPOR-PHASE EPITAXY USING MIXED CARRIER GAS OF H2 AND N2
Bohyama, S, Yoshikawa, K, Naoi, H, Miyake, H, Hiramatsu, K, Iyechika, Y
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 75-76. 2002 (01.01.2002)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 75-76. 2002 (01.01.2002)
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Journal Article
Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H 2 and N 2
Bohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi
Published in Japanese Journal of Applied Physics (15.01.2002)
Published in Japanese Journal of Applied Physics (15.01.2002)
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Journal Article
Substrate of gallium nitride single crystal and process for producing the same
Hiramatsu, Kazumasa, Miyake, Hideto, Bohyama, Shinya, Maeda, Takayoshi, Ono, Yoshinobu
Year of Publication 15.07.2008
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Year of Publication 15.07.2008
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Substrate of gallium nitride single crystal and process for producing the same
ONO YOSHINOBU, MIYAKE HIDETO, MAEDA TAKAYOSHI, HIRAMATSU KAZUMASA, BOHYAMA SHINYA
Year of Publication 15.07.2008
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Year of Publication 15.07.2008
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Substrate of gallium nitride single crystal and process for producing the same
ONO YOSHINOBU, MIYAKE HIDETO, MAEDA TAKAYOSHI, HIRAMATSU KAZUMASA, BOHYAMA SHINYA
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Year of Publication 03.08.2006
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Substrate of gallium nitride single crystal and process for producing the same
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Year of Publication 26.07.2006
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Method of manufacturing III-V group compound semiconductor
IYECHIKA, YASUSHI, HIRAMATSU, KAZUMASA, BOHYAMA, SHINYA, MIYAKE, HIDETO, MAEDA, TAKAYOSHI
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Year of Publication 01.05.2006
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Galliumnitrid-Einkristallsubstrat und Verfahren zur Herstellung desselben
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Year of Publication 30.03.2006
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Substrate of gallium nitride single crystal and process for producing the same
HIDETO MIYAKE, SHINYA BOHYAMA, KAZUMASA HIRAMATSU, YOSHINOBU ONO, TAKAYOSHI MAEDA
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Year of Publication 01.02.2006
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SUBSTRATE OF GALLIUM NITRIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME
ONO YOSHINOBU, MIYAKE HIDETO, MAEDA TAKAYOSHI, HIRAMATSU KAZUMASA, BOHYAMA SHINYA
Year of Publication 04.11.2005
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Year of Publication 04.11.2005
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METHOD OF MANUFACTURING III-V GROUP COMPOUND SEMICONDUCTOR
HIDETO MIYAKE, SHINYA BOHYAMA, KAZUMASA HIRAMATSU, YASUSHI IYECHIKA, TAKAYOSHI MAEDA
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Year of Publication 28.09.2005
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Method of manufacturing III-V group compound semiconductor
Hiramatsu, Kazumasa, Miyake, Hideto, Bohyama, Shinya, Maeda, Takayoshi, Iyechika, Yasushi
Year of Publication 20.09.2005
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Year of Publication 20.09.2005
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Method of manufacturing III-V group compound semiconductor
MIYAKE HIDETO, MAEDA TAKAYOSHI, HIRAMATSU KAZUMASA, BOHYAMA SHINYA, IYECHIKA YASUSHI
Year of Publication 20.09.2005
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Year of Publication 20.09.2005
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Method for fabricating III-V group compound semiconductor
Hiramatsu, Kazumasa, Miyake, Hideto, Bohyama, Shinya, Maeda, Takayoshi, Iyechika, Yasushi
Year of Publication 29.06.2004
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Year of Publication 29.06.2004
Patent
Method for fabricating III-V group compound semiconductor
MIYAKE HIDETO, MAEDA TAKAYOSHI, HIRAMATSU KAZUMASA, BOHYAMA SHINYA, IYECHIKA YASUSHI
Year of Publication 29.06.2004
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Year of Publication 29.06.2004
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Method of manufacturing III-V group compound semiconductor
Hiramatsu, Kazumasa, Miyake, Hideto, Bohyama, Shinya, Maeda, Takayoshi, Iyechika, Yasushi
Year of Publication 13.11.2003
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Year of Publication 13.11.2003
Patent
Method for fabricating III-V Group compound semiconductor
MIYAKE HIDETO, MAEDA TAKAYOSHI, HIRAMATSU KAZUMASA, BOHYAMA SHINYA, IYECHIKA YASUSHI
Year of Publication 06.03.2003
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Year of Publication 06.03.2003
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