Carrier-gas dependence of ELO GaN grown by hydride VPE
Miyake, H., Bohyama, S., Fukui, M., Hiramatsu, K., Iyechika, Y., Maeda, T.
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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Journal Article
Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE
Bohyama, S., Yoshikawa, K., Naoi, H., Miyake, H., Hiramatsu, K., Maeda, T.
Published in Physica status solidi. C (01.12.2003)
Published in Physica status solidi. C (01.12.2003)
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Journal Article
Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
Bohyama, Shinya, Miyake, Hideto, Hiramatsu, Kazumasa, Tsuchida, Yoshihiko, Maeda, Takayoshi
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H 2 and N 2
Bohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi
Published in Japanese Journal of Applied Physics (15.01.2002)
Published in Japanese Journal of Applied Physics (15.01.2002)
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Journal Article
DISTRIBUTION OF THREADING DISLOCATIONS IN EPITAXIAL LATERAL OVERGROWTH GaN BY HYDRIDE VAPOR-PHASE EPITAXY USING MIXED CARRIER GAS OF H2 AND N2
Bohyama, S, Yoshikawa, K, Naoi, H, Miyake, H, Hiramatsu, K, Iyechika, Y
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 75-76. 2002 (01.01.2002)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 75-76. 2002 (01.01.2002)
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Journal Article
Carrier-gas dependence of ELO GaN grown by hydride VPE
MIYAKE, H, BOHYAMA, S, FUKUI, M, HIRAMATSU, K, IYECHIKA, Y, MAEDA, T
Published in Journal of crystal growth (2002)
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Published in Journal of crystal growth (2002)
Conference Proceeding
TWI317990B
HIRAMATSU, KAZUMASA, BOHYAMA, SHINYA, MIYAKE, HIDETO, MAEDA, TAKAYOSHI, ONO, YOSHINOBU
Year of Publication 01.12.2009
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Year of Publication 01.12.2009
Patent
Gallium nitride single crystal substrate and its manufacturing method
HIRAMATSU, KAZUMASA, BOHYAMA, SHINYA, MIYAKE, HIDETO, MAEDA, TAKAYOSHI, ONO, YOSHINOBU
Year of Publication 01.11.2004
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Year of Publication 01.11.2004
Patent
Method of manufacturing III-V group compound semiconductor
IYECHIKA, YASUSHI, BOHYAMA, SHINYA, HIRAMATSU, KAZUMASA, MIYAKE, HIDETO, MAEDA, TAKAYOSHI
Year of Publication 01.03.2004
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Year of Publication 01.03.2004
Patent