An ESD-Protected, One-Time Programmable Memory Front-End Circuit for High-Voltage, Silicon-on-Insulator Technology
Arosio, Martina, Boffino, Chiara, Morini, Sergio, Priefert, Dirk, Albayrak, Oezguer, Boguszewicz, Viktor, Baschirotto, Andrea
Published in IEEE transactions on electron devices (01.06.2021)
Published in IEEE transactions on electron devices (01.06.2021)
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Journal Article
4-Mb MOSFET-selected μtrench phase-change memory experimental chip
BEDESCHI, Ferdinando, BEZ, Roberto, OTTOGALLI, Federica, PELLIZZER, Fabio, PIROVANO, Agostino, RESTA, Claudio, TORELLI, Guido, TOSI, Marina, BOFFINO, Chiara, BONIZZONI, Edoardo, CASSIODORO BUDA, Egidio, CASAGRANDE, Giulio, COSTA, Lucio, FERRARO, Marco, GASTALDI, Roberto, KHOURI, Osama
Published in IEEE journal of solid-state circuits (01.07.2005)
Published in IEEE journal of solid-state circuits (01.07.2005)
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Conference Proceeding
Journal Article
A read/write front-end for an antifuse One-Time-Programmable memory in High Voltage Silicon-On-Insulator technology
Arosio, Martina, Boffino, Chiara, Morini, Sergio, Priefert, Dirk, Albayrak, Oezguer, Boguszewicz, Viktor, Baschirotto, Andrea
Published in 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (01.11.2019)
Published in 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (01.11.2019)
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Conference Proceeding
Staircase-down SET programming approach for phase-change memories
Bedeschi, Ferdinando, Boffino, Chiara, Bonizzoni, Edoardo, Resta, Claudio, Torelli, Guido
Published in Microelectronics (01.10.2007)
Published in Microelectronics (01.10.2007)
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Journal Article