Two modes of HVPE growth of GaN and related macrodefects
Voronenkov, V. V., Bochkareva, N. I., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsyuk, A. I., Zubrilov, A. S., Popp, U. W., Strafela, M., Strunk, H. P., Shreter, Y. G.
Published in Physica status solidi. C (01.03.2013)
Published in Physica status solidi. C (01.03.2013)
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Journal Article
Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells
Bochkareva, N I, Ivanov, A M, Klochkov, AV, Shreter, Y G
Published in Journal of physics. Conference series (01.12.2020)
Published in Journal of physics. Conference series (01.12.2020)
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Journal Article
Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer
Voronenkov, V V, Leonidov, A A, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Kogotkov, V S, Zubrilov, A S, Shreter, Y G
Published in Journal of physics. Conference series (01.03.2019)
Published in Journal of physics. Conference series (01.03.2019)
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Journal Article
Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
Efremov, A. A., Bochkareva, N. I., Gorbunov, R. I., Lavrinovich, D. A., Rebane, Yu. T., Tarkhin, D. V., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2006)
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Journal Article
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen
Bochkareva, N. I., Sheremet, I. A., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
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Journal Article
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Vorontsov-Velyaminov, P. N., Sheremet, I. A., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
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Journal Article
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
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Journal Article
Two modes of HVPE growth of GaN and related macrodefects
Voronenkov, V V, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Rebane, Y T, Tsyuk, A I, Zubrilov, A S, Popp, U W, Strafela, M, Strunk, H P, Shreter, Y G
Published in arXiv.org (20.02.2019)
Published in arXiv.org (20.02.2019)
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Journal Article
Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs
Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Yu. T., Gorbunov, R. I., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2005)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2005)
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Journal Article
Nonuniformity of carrier injection and the degradation of blue LEDs
Bochkareva, N. I., Efremov, A. A., Rebane, Yu. T., Gorbunov, R. I., Klochkov, A. V., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2006)
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Journal Article
Hydride vapor phase epitaxy system for bulk gan layers deposition
Voronenkov, V. V., Bochkareva, N. I., Virko, M. V.
Published in NAUCHNOE PRIBOROSTROENIE (28.12.2018)
Published in NAUCHNOE PRIBOROSTROENIE (28.12.2018)
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Journal Article
The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes
Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Yu. T., Gorbunov, R. I., Klochkov, A. V., Lavrinovich, D. A., Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2005)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2005)
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Journal Article
Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs
Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Kogotkov, V. S., Rebane, Yu. T., Virko, M. V., Shreter, Y. G.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2015)
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Journal Article