Evolution of Surface Morphology of Anthracene Single Crystals Under Annealing
Novikov, V. A., Gadirov, R. M., Kopylova, T. N., Solodova, T. A., Bobrovnikova, I. A., Ivonin, I. V., Tereshchenko, E. V.
Published in Russian physics journal (01.10.2019)
Published in Russian physics journal (01.10.2019)
Get full text
Journal Article
Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy
Bobrovnikova, I. A., Vilisova, M. D., Ivonin, I. V., Lavrent’eva, L. G., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Subach, S. V., Toropov, S. E.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2003)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2003)
Get full text
Journal Article
Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures
Lavrent’eva, L. G., Vilisova, M. D., Bobrovnikova, I. A., Toropov, S. E., Preobrazhenskii, V. V., Semyagin, B. R., Putyato, M. A., Chaldyshev, V. V.
Published in Journal of structural chemistry (01.01.2004)
Published in Journal of structural chemistry (01.01.2004)
Get full text
Journal Article
Vapour phase epitaxial grown GaAs films with a very low deep level concentration
Chaldyshev, V.V., Astrova, E.V., Lebedev, A.A., Bobrovnikova, I.A., Chernov, N.A., Ivleva, O.M., Lavrentieva, L.G., Teterkina, I.V., Vilisova, M.D.
Published in Journal of crystal growth (01.01.1995)
Published in Journal of crystal growth (01.01.1995)
Get full text
Journal Article
Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy
Bobrovnikova, I. A., Veinger, A. I., Vilisova, M. D., Ivonin, I. V., Lavrent'eva, L. G., Lubyshev, D. I., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Subach, S. V., Chaldyshev, V. V., Yakubenya, M. P.
Published in Russian physics journal (01.09.1998)
Published in Russian physics journal (01.09.1998)
Get full text
Journal Article
Structure and properties of epitaxial layers of InxGa1?xAs grown from the gas phase
Vilisova, M. D., Bobrovnikova, I. A., Teterkina, I. V., Chernov, N. A., Yakubenya, M. P.
Published in Soviet Physics Journal (01.02.1992)
Published in Soviet Physics Journal (01.02.1992)
Get full text
Journal Article
Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes
Bobrovnikova, I. A., Vilisova, M. D., Porokhovnichenko, L. P., Ruzaikin, M. P., Ryazanov, V. N.
Published in Soviet Physics Journal (01.06.1990)
Published in Soviet Physics Journal (01.06.1990)
Get full text
Journal Article
Complexing of tellurium-doped gallium arsenide in gas-phase epitaxy
Bobrovnikova, I. A., Lavrent'eva, L. G., Toropov, S. E.
Published in Soviet Physics Journal (01.02.1985)
Published in Soviet Physics Journal (01.02.1985)
Get full text
Journal Article
Preparation and properties of epitaxial ZnGeP2 films
Kataev, Yu. G., Bobrovnikova, I. A., Voevodin, V. G., Drigolenko, E. I., Nesteryuk, L. G., Yakubenya, M. P.
Published in Soviet Physics Journal (01.04.1988)
Published in Soviet Physics Journal (01.04.1988)
Get full text
Journal Article
Vapour phase epitaxial growth GaAs film with a very low deep level concentration
CHALDYSHEV, V. V, ASTROVA, E. V, LEBEDEV, A. A, BOBROVNIKOVA, I. A, CHERNOV, N. A, IVLEVA, O. M, LAVRENTIEVA, L. G, TETERKINA, I. V, VILISOVA, M. D
Published in Journal of crystal growth (1995)
Get full text
Published in Journal of crystal growth (1995)
Conference Proceeding