Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors
Chang, Shoou-Jinn, Duan, Bi-Gui, Hsiao, Chih-Hung, Young, Sheng-Joue, Wang, Bo-Chin, Kao, Tsung-Hsien, Tsai, Kai-Shiang, Wu, San-Lein
Published in IEEE photonics technology letters (01.11.2013)
Published in IEEE photonics technology letters (01.11.2013)
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Journal Article
Noise Properties of Low-Temperature-Grown Co-Doped ZnO Nanorods as Ultraviolet Photodetectors
Liu, Chung-Wei, Chang, Shoou-Jinn, Hsiao, Chih-Hung, Lo, Kuang-Yao, Kao, Tsung-Hsien, Wang, Bo-Chin, Young, Sheng-Joue, Tsai, Kai-Shiang, Wu, San-Lein
Published in IEEE journal of selected topics in quantum electronics (01.11.2014)
Published in IEEE journal of selected topics in quantum electronics (01.11.2014)
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Journal Article
ZnO-Based Ultraviolet Photodetectors With Novel Nanosheet Structures
Young, Sheng-Joue, Liu, Yi-Hsing, Hsiao, Chih-Hung, Chang, Shoou-Jinn, Wang, Bo-Chin, Kao, Tsung-Hsien, Tsai, Kai-Shiang, Wu, San-Lein
Published in IEEE transactions on nanotechnology (01.03.2014)
Published in IEEE transactions on nanotechnology (01.03.2014)
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Journal Article
Novel Ga-ZnO Nanosheet Structures Applied in Ultraviolet Photodetectors
Yang, Chih-Chiang, Su, Yan-Kuin, Hsiao, Chih-Hung, Young, Sheng-Joue, Kao, Tsung-Hsien, Chuang, Ming-Yueh, Huang, Yu-Chun, Wang, Bo-Chin, Wu, San-Lein
Published in IEEE photonics technology letters (01.07.2014)
Published in IEEE photonics technology letters (01.07.2014)
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Journal Article
Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain
Lo, Kun-Yuan, Cheng, Osbert, Fang, Yean-Kuen, Yang, Chih-Wei, Kao, Tsung-Hsien, Tsai, Kai-Shiang, Huang, Po Chin, Wang, Bo-Chin, Chen, Jone-Fang, Wu, San-Lein, Tsai, Shih-Chang, Chen, Cheng-Guo
Published in Journal of nanomaterials (01.01.2014)
Published in Journal of nanomaterials (01.01.2014)
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Journal Article
Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise
Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Cheng, O., Po Chin Huang
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation
Kao, Tsung-Hsien, Chang, Shoou-Jinn, Fang, Yean-Kuen, Huang, Po-Chin, Wang, Bo-Chin, Wu, Chung-Yi, Wu, San-Lein
Published in Solid-state electronics (01.01.2016)
Published in Solid-state electronics (01.01.2016)
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Journal Article
Low-Frequency Noise Characteristics for Various -Added -Based 28-nm High- k/Metal-Gate nMOSFETs
Tsai, Shih Chang, Huang, Po Chin, Chen, Jone F., Wu, San Lein, Wang, Bo Chin, Chang, Shoou Jinn, Hsu, Che Hua, Yang, Chih Wei, Lai, Chien Ming, Hsu, Chia Wei, Cheng, Osbert
Published in IEEE electron device letters (01.07.2013)
Published in IEEE electron device letters (01.07.2013)
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Journal Article
Correlation Between Random Telegraph Noise and \hbox/f Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain
Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou Jinn Chang, Yu Min Lin, Kun Hsien Lee, Cheng, O.
Published in IEEE electron device letters (01.07.2012)
Published in IEEE electron device letters (01.07.2012)
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Journal Article
One Step Fabrication of Low Noise CuO Nanowire-Bridge Gas Sensor
Wang, Sheng-Bo, Hsiao, Chih-Hung, Hung, Shang-Chao, Chang, Shoou-Jinn, Young, Sheng-Joue, Wang, Bo-Chin, Wu, San-Lein, Huang, Bohr-Ran, Han, Hsieh-Cheng
Published in International journal of electrochemical science (01.03.2013)
Published in International journal of electrochemical science (01.03.2013)
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Journal Article
Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs
Wang, Bo-Chin, Kang, Ting-Kuo, Wu, San-Lein, Chang, Shoou-Jinn
Published in Microelectronics and reliability (01.05.2010)
Published in Microelectronics and reliability (01.05.2010)
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Journal Article
Low-Frequency Noise Characteristics for Various ZrO2-Added HfO2-Based 28-nm High-k/Metal-Gate nMOSFETs
SHIH CHANG TSAI, SAN LEIN WU, CHEN, Jone F, BO CHIN WANG, SHOOU JINN CHANG, CHE HUA HSU, CHIH WEI YANG, CHIEN MING LAI, CHIA WEI HSU, OSBERT CHENG, PO CHIN HUANG
Published in IEEE electron device letters (01.07.2013)
Published in IEEE electron device letters (01.07.2013)
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Journal Article
Correlation Between Random Telegraph Noise and 1/f Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain
BO CHIN WANG, SAN LEIN WU, CHIEN WEI HUANG, YU YING LU, SHOOU JINN CHANG, YU MIN LIN, KUN HSIEN LEE, CHENG, Osbert
Published in IEEE electron device letters (01.07.2012)
Published in IEEE electron device letters (01.07.2012)
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Journal Article
Impact of Aluminum Ion Implantation on the Low Frequency Noise Characteristics of Hf-Based High- \(k\) /Metal Gate pMOSFETs
Kao, Tsung-Hsien, Cheng, Osbert, Chang, Shoou-Jinn, Wu, San-Lein, Wu, Chung-Yi, Fang, Yean-Kuen, Wang, Bo-Chin, Huang, Po Chin, Lai, Chien-Ming, Hsu, Chia-Wei, Chen, Yi-Wen
Published in IEEE electron device letters (01.09.2014)
Published in IEEE electron device letters (01.09.2014)
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Journal Article
Comparison of the trap behavior between ZrO 2 and HfO 2 gate stack nMOSFETs by 1/f noise and random telegraph noise
Wang, Bo Chin, Wu, San Lein, Lu, Yu Ying, Chang, Shoou Jinn, Chen, Jone Fang, Tsai, Shih Chang, Hsu, Che Hua, Yang, Chih Wei, Chen, Cheng Guo, Cheng, Osbert, Huang, Po Chin
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
Investigation of trap properties of Hf0.83Zr0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses
Tsai, Shih-Chang, Wu, San-Lein, Huang, Po-Chin, Wang, Bo-Chin, Tsai, Kai-Shiang, Kao, Tsung-Hsien, Yang, Chih-Wei, Chen, Cheng-Guo, Cheng, Osbert, Fang, Yean-Kuen, Chang, Shoou-Jinn, Chen, Jone-Fang
Published in Japanese Journal of Applied Physics (01.08.2014)
Published in Japanese Journal of Applied Physics (01.08.2014)
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Journal Article
Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
Wang, Bo-Chin, Wu, San-Lein, Lu, Yu-Ying, Huang, Chien-Wei, Wu, Chung-Yi, Lin, Yu-Min, Lee, Kun-Hsien, Cheng, Osbert, Huang, Po-Chin, Chang, Shoou-Jinn
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Investigation of trap properties of Hf 0.83 Zr 0.17 O 2 high- k gate stack p-type MOSFETs by low-frequency (1/ f ) noise and random telegraph noise analyses
Tsai, Shih-Chang, Wu, San-Lein, Huang, Po-Chin, Wang, Bo-Chin, Tsai, Kai-Shiang, Kao, Tsung-Hsien, Yang, Chih-Wei, Chen, Cheng-Guo, Cheng, Osbert, Fang, Yean-Kuen, Chang, Shoou-Jinn, Chen, Jone-Fang
Published in Japanese Journal of Applied Physics (01.08.2014)
Published in Japanese Journal of Applied Physics (01.08.2014)
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Journal Article
Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
Wang, Bo Chin, Wu, San Lein, Huang, Chien Wei, Lu, Yu Ying, Chang, Shoou Jinn, Lin, Yu Min, Lee, Kun Hsien, Cheng, Osbert
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article