Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
Seneza, Cleophace, Berger, Christoph, Sana, Prabha, Witte, Harmut, Bläsing, Jürgen, Dempewolf, Anja, Dadgar, Armin, Christen, Jürgen, Strittmatter, André
Published in Japanese Journal of Applied Physics (01.01.2022)
Published in Japanese Journal of Applied Physics (01.01.2022)
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Journal Article
Properties of C‐doped GaN
Lesnik, Andreas, Hoffmann, Marc P., Fariza, Aqdas, Bläsing, Jürgen, Witte, Hartmut, Veit, Peter, Hörich, Florian, Berger, Christoph, Hennig, Jonas, Dadgar, Armin, Strittmatter, André
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
Romero, María Fátima, Feneberg, Martin, Moser, Pascal, Berger, Christoph, Bläsing, Jürgen, Dadgar, Armin, Krost, Alois, Sakalauskas, Egidijus, Calle, Fernando, Goldhahn, Rüdiger
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Spontaneous and Position-Controlled Epitaxial Growth of ZnO Nanowires on AlN/Si by CVD
Kolhep, Maximilian, Bläsing, Jürgen, Strittmatter, André, Zacharias, Margit
Published in Crystal growth & design (04.10.2023)
Published in Crystal growth & design (04.10.2023)
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Journal Article
High resistive buffer layers by Fermi level engineering
Dadgar, Armin, Borgmann, Ralf, Bläsing, Jürgen, Strittmatter, André
Published in Journal of applied physics (14.07.2023)
Published in Journal of applied physics (14.07.2023)
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Journal Article
Blue shift of the absorption onset and bandgap bowing in rutile GexSn1−xO2
Kluth, Elias, Nagashima, Yo, Osawa, Shohei, Hirose, Yasushi, Bläsing, Jürgen, Strittmatter, André, Goldhahn, Rüdiger, Feneberg, Martin
Published in Applied physics letters (16.09.2024)
Published in Applied physics letters (16.09.2024)
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Journal Article
Laser-assisted local metal–organic vapor phase epitaxy
Trippel, Max, Bläsing, Jürgen, Wieneke, Matthias, Dadgar, Armin, Schmidt, Gordon, Bertram, Frank, Christen, Jürgen, Strittmatter, André
Published in Review of scientific instruments (01.11.2022)
Published in Review of scientific instruments (01.11.2022)
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Journal Article
The impurity size-effect and phonon deformation potentials in wurtzite GaN
Kluth, Elias, Wieneke, Matthias, Bläsing, Jürgen, Witte, Hartmut, Lange, Karsten, Dadgar, Armin, Goldhahn, Rüdiger, Feneberg, Martin
Published in Semiconductor science and technology (01.09.2020)
Published in Semiconductor science and technology (01.09.2020)
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Journal Article
Low-resistivity vertical current transport across AlInN/GaN interfaces
Sana, Prabha, Seneza, Cleophace, Berger, Christoph, Witte, Hartmut, Schmidt, Marc-Peter, Bläsing, Jürgen, Neugebauer, Silvio, Hoerich, Florian, Dadgar, Armin, Strittmatter, André
Published in Japanese Journal of Applied Physics (01.01.2021)
Published in Japanese Journal of Applied Physics (01.01.2021)
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Journal Article
Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
Neugebauer, Silvio, Metzner, Sebastian, Bläsing, Jürgen, Bertram, Frank, Dadgar, Armin, Christen, Jürgen, Strittmatter, André
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
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Journal Article
In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range
Berger, Christoph, Dadgar, Armin, Bläsing, Jürgen, Krost, Alois
Published in Journal of crystal growth (01.05.2013)
Published in Journal of crystal growth (01.05.2013)
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Journal Article
Conference Proceeding
Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film
Sheng, Bowen, Bertram, Frank, Zheng, Xiantong, Wang, Ping, Schmidt, Gordon, Veit, Peter, Bläsing, Jürgen, Chen, Zhaoying, Strittmatter, André, Christen, Jürgen, Shen, Bo, Wang, Xinqiang
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Growth and coalescence behavior of semipolar $(11{bar {2}}2)$ GaN on pre-structured r-plane sapphire substrates
Schwaiger, Stephan, Metzner, Sebastian, Wunderer, Thomas, Argut, Ilona, Thalmair, Johannes, Lipski, Frank, Wieneke, Matthias, Bläsing, Jürgen, Bertram, Frank, Zweck, Josef, Krost, Alois, Christen, Jürgen, Scholz, Ferdinand
Published in physica status solidi (b) (01.03.2011)
Published in physica status solidi (b) (01.03.2011)
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Journal Article
Growth and characterization of stacking fault reduced GaN on sapphire
Bläsing, Jürgen, Holý, Vaclav, Dadgar, Armin, Veit, Peter, Christen, Jürgen, Ploch, Simon, Frentrup, Martin, Wernicke, Tim, Kneissl, Michael, Krost, Alois
Published in Journal of physics. D, Applied physics (27.03.2013)
Published in Journal of physics. D, Applied physics (27.03.2013)
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Journal Article
Sputter epitaxy of AlN and GaN on Si for device applications
Dadgar, Armin, Horich, Florian, Borgmann, Ralf, Luttich, Christopher, Blasing, Jurgen, Schmidt, Gordon, Veit, Peter, Christen, Jurgen, Strittmatter, Andre
Published in 2022 Compound Semiconductor Week (CSW) (01.06.2022)
Published in 2022 Compound Semiconductor Week (CSW) (01.06.2022)
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Conference Proceeding
Wafer curvature, temperature inhomogeneity, plastic deformation and their impact on the properties of GaN on silicon power and opto-electronic structures
Schulz, Oliver, Dadgar, Armin, Hennig, Jonas, Krumm, Oliver, Fritze, Stephanie, Bläsing, Jürgen, Witte, Hartmut, Diez, Annette, Krost, Alois
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
Wieneke, Matthias, Noltemeyer, Martin, Bastek, Barbara, Rohrbeck, Antje, Witte, Hartmut, Veit, Peter, Bläsing, Jürgen, Dadgar, Armin, Christen, Jürgen, Krost, Alois
Published in Physica Status Solidi (b) (01.03.2011)
Published in Physica Status Solidi (b) (01.03.2011)
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Journal Article
Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)
Ravash, Roghaiyeh, Veit, Peter, Müller, Mathias, Schmidt, Gordon, Dempewolf, Anja, Hempel, Thomas, Bläsing, Jürgen, Bertram, Frank, Dadgar, Armin, Christen, Jürgen, Krost, Alois
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article