Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
Axelsson, Olle, Gustafsson, Sebastian, Hjelmgren, Hans, Rorsman, Niklas, Blanck, Herve, Splettstoesser, Jorg, Thorpe, Jim, Roedle, Thomas, Thorsell, Mattias
Published in IEEE transactions on electron devices (01.01.2016)
Published in IEEE transactions on electron devices (01.01.2016)
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Journal Article
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
Zhan, Gao, Rampazzo, Fabiana, Santi, Carlo De, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Blanck, Herve, Grunenputt, Jan, Sommer, Daniel, Chen, Ding Yuan, Wen, Kai-Hsin, Chen, Jr-Tai, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.06.2023)
Published in IEEE transactions on electron devices (01.06.2023)
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Journal Article
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Chen, Ding-Yuan, Persson, Axel R, Wen, Kai-Hsin, Sommer, Daniel, Grünenpütt, Jan, Blanck, Hervé, Thorsell, Mattias, Kordina, Olof, Darakchieva, Vanya, Persson, Per O Å, Chen, Jr-Tai, Rorsman, Niklas
Published in Semiconductor science and technology (2022)
Published in Semiconductor science and technology (2022)
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Journal Article
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs
Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grünenpütt, Jan, Sommer, Daniel, Blanck, Hervé, Lambert, Benoit, Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M.
Published in Microelectronics and reliability (01.11.2022)
Published in Microelectronics and reliability (01.11.2022)
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Journal Article
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
Gao, Zhan, Rampazzo, Fabiana, Meneghini, Matteo, Modolo, Nicola, De Santi, Carlo, Blanck, Hervé, Stieglauer, Hermann, Sommer, Daniel, Grünenpütt, Jan, Kordina, Olof, Chen, Jr-Tai, Jacquet, J-C, Lacam, C., Piotrowicz, S., Meneghesso, Gaudenzio, Zanoni, Enrico
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Journal Article
Reliability studies on GaN HEMTs with sputtered Iridium gate module
Lossy, Richard, Blanck, Hervé, Würfl, Joachim
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Journal Article
Conference Proceeding
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence
Brazzini, Tommaso, Casbon, Michael A., Sun, Huarui, Uren, Michael J., Lees, Jonathan, Tasker, Paul J., Jung, Helmut, Blanck, Hervé, Kuball, Martin
Published in Microelectronics and reliability (01.12.2015)
Published in Microelectronics and reliability (01.12.2015)
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Journal Article
Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface
Jung, Helmut, Behtash, Reza, Thorpe, James R., Riepe, Klaus, Bourgeois, Franck, Blanck, Hervé, Chuvilin, Andrey, Kaiser, Ute
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance
Jung, Helmut, Abele, Peter, Grünenpütt, Jan, Hosch, Michael, Schauwecker, Bernd, Blanck, Hervé, Rödle, Thomas, Schäfer, Michael
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Industrial GaN FET technology
Blanck, Hervé, Thorpe, James R., Behtash, Reza, Splettstößer, Jörg, Brückner, Peter, Heckmann, Sylvain, Jung, Helmut, Riepe, Klaus, Bourgeois, Franck, Hosch, Michael, Köhn, Dominik, Stieglauer, Hermann, Floriot, Didier, Lambert, Benoît, Favede, Laurent, Ouarch, Zineb, Camiade, Marc
Published in International journal of microwave and wireless technologies (01.02.2010)
Published in International journal of microwave and wireless technologies (01.02.2010)
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Journal Article
Impact of in situ NH 3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Chen, Ding-Yuan, Persson, Axel R, Wen, Kai-Hsin, Sommer, Daniel, Grünenpütt, Jan, Blanck, Hervé, Thorsell, Mattias, Kordina, Olof, Darakchieva, Vanya, Persson, Per O Å, Chen, Jr-Tai, Rorsman, Niklas
Published in Semiconductor science and technology (01.03.2022)
Published in Semiconductor science and technology (01.03.2022)
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Journal Article
Monolithic upconversion and reference IC for power amplifier linearization using GaAs HBTs
Bingol, C., Hein, H., Gammn, E., Oehler, F., Doser, W., Riepe, K., Blanck, H.
Published in 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) (2000)
Published in 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) (2000)
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Conference Proceeding
Boron implantation into GaAs/Ga0.5In0.5P heterostructures
HENKEL, A, DELAGE, S. L, DI FORTE-POISSON, M. A, BLANCK, H, HARTNAGEL, H. L
Published in Japanese journal of applied physics (1997)
Published in Japanese journal of applied physics (1997)
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Journal Article
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion
Rzin, Mehdi, Meneghini, Matteo, Rampazzo, Fabiana, Zhan, Veronica Gao, Marcon, Daniele, Grunenputt, Jan, Jung, Helmut, Lambert, Benoit, Riepe, Klaus, Blanck, Herve, Graff, Andreas, Altmann, Frank, Simon-Najasek, Michel, Poppitz, David, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.07.2020)
Published in IEEE transactions on electron devices (01.07.2020)
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Journal Article
Hot-Electron Electroluminescence Under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes
Brazzini, Tommaso, Casbon, Michael A., Uren, Michael J., Tasker, Paul J., Jung, Helmut, Blanck, Herve, Kuball, Martin
Published in IEEE transactions on electron devices (01.05.2017)
Published in IEEE transactions on electron devices (01.05.2017)
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Journal Article
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse
Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grunenputt, Jan, Sommer, Daniel, Blanck, Herve, Lambert, Benoit, Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Broadband 8 W Ka-band MMIC Power Amplifier Using 100 nm GaN Technology
Fakhfakh, Seifeddine, Driad, Samira, Fellon, Philippe, Madel, Manfred, Trinh-Xuan, Linh, Blanck, Herve, Camiade, Marc
Published in 2022 17th European Microwave Integrated Circuits Conference (EuMIC) (26.09.2022)
Published in 2022 17th European Microwave Integrated Circuits Conference (EuMIC) (26.09.2022)
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Conference Proceeding