Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions
Fröhlich, Karol, Kundrata, Ivan, Blaho, Michal, Precner, Marian, Ťapajna, Milan, Klimo, Martin, Šuch, Ondrej, Škvarek, Ondrej
Published in Journal of applied physics (21.10.2018)
Published in Journal of applied physics (21.10.2018)
Get full text
Journal Article
Mg Doping of N-Polar, In-Rich InAlN
Kuzmík, Ján, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Blaho, Michal, Stoklas, Roman, Dobročka, Edmund, Rosová, Alica, Kučera, Michal, Gucmann, Filip, Gregušová, Dagmar, Precner, Marian, Vincze, Andrej
Published in Materials (10.03.2023)
Published in Materials (10.03.2023)
Get full text
Journal Article
Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations
Chvala, Ales, Nagy, Lukas, Marek, Juraj, Priesol, Juraj, Donoval, Daniel, Blaho, Michal, Gregusova, Dagmar, Kuzmik, Jan, Satka, Alexander
Published in IEEE transactions on electron devices (01.06.2018)
Published in IEEE transactions on electron devices (01.06.2018)
Get full text
Journal Article
GaAs Nanomembranes in the High Electron Mobility Transistor Technology
Gregušová, Dagmar, Dobročka, Edmund, Eliáš, Peter, Stoklas, Roman, Blaho, Michal, Pohorelec, Ondrej, Haščík, Štefan, Kučera, Michal, Kúdela, Róbert
Published in Materials (22.06.2021)
Published in Materials (22.06.2021)
Get full text
Journal Article
Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs
Gregušová, Dagmar, Blaho, Michal, Haščík, Štefan, Šichman, Peter, Laurenčíková, Agáta, Seifertová, Alena, Dérer, Ján, Brunner, Frank, Würfl, Joachim, Kuzmík, Ján
Published in Physica status solidi. A, Applications and materials science (01.11.2017)
Published in Physica status solidi. A, Applications and materials science (01.11.2017)
Get full text
Journal Article
Reducing the Impact of Uncertainties in Networked Control Systems Using Type-2 Fuzzy Logic
Michal, Blaho, J´n, Murgaš, Eugen, Viszus, Peter, Fodrek
Published in Journal of Electrical Engineering (31.01.2015)
Published in Journal of Electrical Engineering (31.01.2015)
Get full text
Journal Article
Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire
Hasenöhrl, Stanislav, Blaho, Michal, Dobročka, Edmund, Gucmann, Filip, Kučera, Michal, Nádaždy, Peter, Stoklas, Roman, Rosová, Alica, Kuzmík, Ján
Published in Materials science in semiconductor processing (15.03.2023)
Published in Materials science in semiconductor processing (15.03.2023)
Get full text
Journal Article
Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region
Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, Stefan, Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J.
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
Get full text
Journal Article
InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
Gregušová, Dagmar, Tóth, Lajos, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Haš ík, Štefan, Cora, Ildikó, Fogarassy, Zsolt, Stoklas, Roman, Seifertová, Alena, Blaho, Michal, Lauren íková, Agáta, Oyobiki, Tatsuya, Pécz, Béla, Hashizume, Tamotsu, Kuzmík, Ján
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
Performance of HfOx- and TaOx-based Resistive Switching Structures for Realization of Minimum and Maximum Functions
Fröhlich, Karol, Kundrata, Ivan, Blaho, Michal, Precner, Marian, T̆apajna, Milan, Klimo, Martin, Šuch, Ondrej, Škvarek, Ondrej
Published in MRS advances (01.01.2018)
Published in MRS advances (01.01.2018)
Get full text
Journal Article
Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs
Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján
Published in Microelectronic engineering (01.12.2013)
Published in Microelectronic engineering (01.12.2013)
Get full text
Journal Article
ZrO 2 /InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions
Gregušová, Dagmar, Hušeková, Kristína, Stoklas, Roman, Blaho, Michal, Jurkovič, Michal, Carlin, Jean-Francois, Grandjean, Nicolas, Kordoš, Peter
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
Get full text
Journal Article
ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions
Gregusova, Dagmar, Husekova, Kristina, Stoklas, Roman, Blaho, Michal, Jurkovic, Michal, Carlin, Jean-Francois, Grandjean, Nicolas, Kordos, Peter
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
Get full text
Journal Article
Ni/Au―Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs : Emerging materials and processes for nanoelectronics and sensors
BLAHO, Michal, GREGUSOVA, Dagmar, WÜRFL, Joachim, KUZMIK, Ján, JURKOVIC, Michal, HASCIK, Stefan, FEDOR, Ján, KORDOS, Peter, FRÖHLICH, Karol, BRUNNER, Frank, CHO, Melani, HILT, Oliver
Published in Microelectronic engineering (2013)
Get full text
Published in Microelectronic engineering (2013)
Journal Article
ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions
Gregušová, Dagmar, Hušeková, Kristína, Stoklas, Roman, Blaho, Michal, Jurkovič, Michal, Carlin, Jean-Francois, Grandjean, Nicolas, Kordoš, Peter
Published in Jpn J Appl Phys (01.08.2013)
Published in Jpn J Appl Phys (01.08.2013)
Get full text
Journal Article
Invited: Polarization engineering in GaN-based normally-off transistors
Gregusova, Dagmar, Pohorelec, Ondrej, Tapajna, Milan, Blaho, Michal, Gucmann, Filip, Stoklas, Roman, Hasenohrl, Stanislav, Laurencikova, Agata, Sichman, Peter, Hascik, Stefan, Kuzmik, Jan
Published in 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) (17.11.2021)
Published in 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) (17.11.2021)
Get full text
Conference Proceeding
Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell
Chvala, Ales, Nagy, Lukas, Marek, Juraj, Priesol, Juraj, Donoval, Daniel, Satka, Alexander, Blaho, Michal, Gregusova, Dagmar, Kuzmik, Jan
Published in 2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS) (01.04.2018)
Published in 2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS) (01.04.2018)
Get full text
Conference Proceeding
Performance analysis of monolithically integrated depletion-/enhancement-mode InAlN/GaN heterostructure HEMT transistors
Nagy, Lukas, Chvala, Ales, Stopjakova, Viera, Blaho, Michal, Kuzmik, Jan, Gregusova, Dagmar, Satka, Alexander
Published in 2017 International Conference on Applied Electronics (AE) (01.09.2017)
Published in 2017 International Conference on Applied Electronics (AE) (01.09.2017)
Get full text
Conference Proceeding
The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties
Gregusova, D., Kudela, R., Stoklas, R., Blaho, M., Gucmann, F., Fedor, J., Kordos, P.
Published in The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems (01.11.2012)
Published in The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems (01.11.2012)
Get full text
Conference Proceeding