Low Energy Transition of GeTe RF Phase Change Switches
Cruz, Leonard De La, Ivanov, Tony, Birdwell, A. G., Weil, James D., Kingkeo, Khamsouk, Zaghloul, Mona
Published in IEEE transactions on electron devices (01.08.2023)
Published in IEEE transactions on electron devices (01.08.2023)
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Journal Article
First-principles investigation of oxidized Si- and Ge-terminated diamond (100) surfaces
Gomez, Jr, H, Cruz, J, Milne, C, Debnath, T, Birdwell, A G, Garratt, E J, Pate, B B, Rudin, S, Ruzmetov, D A, Weil, J D, Shah, P B, Ivanov, T G, Lake, R K, Groves, M N, Neupane, M R
Published in The Journal of chemical physics (14.08.2024)
Published in The Journal of chemical physics (14.08.2024)
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Journal Article
Optical interband spectra and band structure of Ru2Si3 and Ru2Ge3
HENRION, W, REBIEN, M, BIRDWELL, A. G, ANTONOV, V. N, JEPSEN, O
Published in Thin solid films (27.03.2000)
Published in Thin solid films (27.03.2000)
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Conference Proceeding
Journal Article
Photoreflectance study of the electronic structure of Si-doped InyGa1−yAs1−xNx films with x < 0.012
Kang, Y.-S., Robins, L. H., Birdwell, A. G., Shapiro, A. J., Thurber, W. R., Vaudin, M. D., Fahmi, M. M. E., Bryson, D., Mohammad, S. N.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article
Optical interband spectra and band structure of Ru sub(2)Si sub(3) and Ru sub(2)Ge sub(3)
Henrion, W, Rebien, M, Birdwell, A G, Antonov, V N, Jepsen, O
Published in Thin solid films (01.01.2000)
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Published in Thin solid films (01.01.2000)
Journal Article
Photoreflectance study of the electronic structure of Si‐doped In y Ga 1− y As 1− x N x films with x < 0.012
Kang, Y.‐S., Robins, L. H., Birdwell, A. G., Shapiro, A. J., Thurber, W. R., Vaudin, M. D., Fahmi, M. M. E., Bryson, D., Mohammad, S. N.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article