Predictive Hot-Carrier Modeling of n-Channel MOSFETs
Bina, Markus, Tyaginov, Stanislav, Franco, Jacopo, Rupp, Karl, Wimmer, Yannick, Osintsev, Dmitry, Kaczer, Ben, Grasser, Tibor
Published in IEEE transactions on electron devices (01.09.2014)
Published in IEEE transactions on electron devices (01.09.2014)
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Journal Article
Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation
Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Rupp, Karl, Bina, Markus, Enichlmair, Hubert, Jong-Mun Park, Minixhofer, Rainer, Ceric, Hajdin, Grasser, Tibor
Published in IEEE transactions on electron devices (01.06.2015)
Published in IEEE transactions on electron devices (01.06.2015)
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Journal Article
On the importance of electron-electron scattering for hot-carrier degradation
Tyaginov, Stanislav, Bina, Markus, Franco, Jacopo, Wimmer, Yannick, Kaczer, Ben, Grasser, Tibor
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Physical modeling of hot-carrier degradation for short- and long-channel MOSFETs
Tyaginov, Stanislav, Bina, Markus, Franco, Jacopo, Osintsev, Dmitri, Triebl, Oliver, Kaczer, Ben, Grasser, Tibor
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs
Illarionov, Yury, Bina, Markus, Tyaginov, Stanislav, Rott, Karina, Kaczer, Ben, Reisinger, Hans, Grasser, Tibor
Published in IEEE transactions on electron devices (01.09.2015)
Published in IEEE transactions on electron devices (01.09.2015)
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Journal Article
A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs
Tyaginov, Stanislav, Bina, Markus, Franco, Jacopo, Wimmer, Yannick, Osintsev, Dmitri, Kaczer, Ben, Grasser, Tibor
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
Published in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2014)
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Conference Proceeding
dV/dt IGBT METHOD FOR PRODUCING IGBT WITH dV/dt CONTROLLABILITY
JAEGER CHRISTIAN, SANTOS RODRIGUEZ FRANCISCO JAVIER, DAINESE MATTEO, BINA MARKUS, VELLEI ANTONIO, PHILIPPOU ALEXANDER, LAVEN JOHANNES GEORG
Year of Publication 03.05.2019
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Year of Publication 03.05.2019
Patent
dV/dt - POWER SEMICONDUCTOR DEVICE WITH dV/dt CONTROLLABILITY AND CROSS-TRENCH ARRANGEMENT
JAEGER CHRISTIAN, LEENDERTZ CASPAR, DAINESE MATTEO, BINA MARKUS, DIRNSTORFER INGO, PHILIPPOU ALEXANDER, GRIEBL ERICH, LAVEN JOHANNES GEORG, PFIRSCH FRANK DIETER
Year of Publication 07.12.2018
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Year of Publication 07.12.2018
Patent
(Invited) Multiphonon Processes as the Origin of Reliability Issues
Goes, Wolfgang, Toledano-Luque, Maria, Schanovsky, Franz, Bina, Markus, Baumgartner, Oskar, Kaczer, Ben, Grasser, Tibor
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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Journal Article
(Late) Essential ingredients for modeling of hot-carrier degradation in ultra-scaled MOSFETs
Tyaginov, Stanislav, Bina, Markus, Franco, Jacopo, Osintsev, Dmitri, Wimmer, Yannick, Kaczer, Ben, Grasser, Tibor
Published in 2013 IEEE International Integrated Reliability Workshop Final Report (01.10.2013)
Published in 2013 IEEE International Integrated Reliability Workshop Final Report (01.10.2013)
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Conference Proceeding
Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices
Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Rupp, Karl, Bina, Markus, Enichlmair, Hubert, Jong-Mun Park, Ceric, Hajdin, Grasser, Tibor
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
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Conference Proceeding
Power semiconductor device having elevated source regions and recessed body regions
Dainese, Matteo, Beninger-Bina, Markus, Dirnstorfer, Ingo, Griebl, Erich
Year of Publication 30.01.2024
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Year of Publication 30.01.2024
Patent
Power semiconductor device having overvoltage protection and method of manufacturing the same
Dainese, Matteo, Beninger-Bina, Markus, Basler, Thomas, Schulze, Hans-Joachim
Year of Publication 12.12.2023
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Year of Publication 12.12.2023
Patent
Power Diode and Method of Manufacturing a Power Diode
Mauder, Anton, Dainese, Matteo, Beninger-Bina, Markus, Barusic, Mario
Year of Publication 28.09.2023
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Year of Publication 28.09.2023
Patent
Power diode and method of manufacturing a power diode
Mauder, Anton, Dainese, Matteo, Beninger-Bina, Markus, Barusic, Mario
Year of Publication 04.07.2023
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Year of Publication 04.07.2023
Patent