Terahertz response and colossal Kerr rotation from the surface states of the topological insulator Bi2Se3
Valdés Aguilar, R, Stier, A V, Liu, W, Bilbro, L S, George, D K, Bansal, N, Wu, L, Cerne, J, Markelz, A G, Oh, S, Armitage, N P
Published in Physical review letters (24.02.2012)
Published in Physical review letters (24.02.2012)
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Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs
Trew, R.J., Yueying Liu, Bilbro, L., Weiwei Kuang, Vetury, R., Shealy, J.B.
Published in IEEE transactions on microwave theory and techniques (01.05.2006)
Published in IEEE transactions on microwave theory and techniques (01.05.2006)
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Journal Article
Modeling of the Gate Leakage Current in AlGaN/GaN HFETs
Goswami, Arunesh, Trew, Robert J., Bilbro, Griff L.
Published in IEEE transactions on electron devices (01.04.2014)
Published in IEEE transactions on electron devices (01.04.2014)
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Journal Article
A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs
Schimizzi, R. D., Trew, R. J., Bilbro, G. L.
Published in IEEE transactions on electron devices (01.11.2012)
Published in IEEE transactions on electron devices (01.11.2012)
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Journal Article
A sudden collapse in the transport lifetime across the topological phase transition in (Bi1−xInx)2Se3
Wu, Liang, Brahlek, M., Valdés Aguilar, R., Stier, A. V., Morris, C. M., Lubashevsky, Y., Bilbro, L. S., Bansal, N., Oh, S., Armitage, N. P.
Published in Nature physics (16.06.2013)
Published in Nature physics (16.06.2013)
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Journal Article
Focused local learning with wavelet neural networks
Rying, E.A., Bilbro, G.L., Jye-Chyi Lu
Published in IEEE transactions on neural networks (01.03.2002)
Published in IEEE transactions on neural networks (01.03.2002)
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Journal Article
Sample-sort simulated annealing
Thompson, D.R., Bilbro, G.L.
Published in IEEE transactions on systems, man and cybernetics. Part B, Cybernetics (01.06.2005)
Published in IEEE transactions on systems, man and cybernetics. Part B, Cybernetics (01.06.2005)
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Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion devices
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Conference Proceeding
A Compact Physical AlGaN/GaN HFET Model
Danqiong Hou, Bilbro, G. L., Trew, R. J.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors
Goswami, Arunesh, Trew, Robert J., Bilbro, Griff L.
Published in Journal of applied physics (28.10.2014)
Published in Journal of applied physics (28.10.2014)
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The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter
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Conference Proceeding
Analytic Model for Conduction Current in AlGaN/ GaN HFETs/ HEMTs
Hou, Danqiong, Bilbro, Griff L., Trew, Robert J.
Published in Active and Passive Electronic Components (2012)
Published in Active and Passive Electronic Components (2012)
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Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3
Valdés Aguilar, R., Wu, L., Stier, A. V., Bilbro, L. S., Brahlek, M., Bansal, N., Oh, S., Armitage, N. P.
Published in Journal of applied physics (21.04.2013)
Published in Journal of applied physics (21.04.2013)
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DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K
Hatfield, C.W., Bilbro, G.L., Allen, S.T., Palmour, J.W.
Published in IEEE transactions on electron devices (01.09.1998)
Published in IEEE transactions on electron devices (01.09.1998)
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