A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties
Li, Botong, Zhang, Xiaodong, Zhang, Li, Ma, Yongjian, Tang, Wenbo, Chen, Tiwei, Hu, Yu, Zhou, Xin, Bian, Chunxu, Zeng, Chunhong, Ju, Tao, Zeng, Zhongming, Zhang, Baoshun
Published in Journal of semiconductors (01.06.2023)
Published in Journal of semiconductors (01.06.2023)
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Journal Article
Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD
Tang, Wenbo, Han, Xueli, Zhang, Xiaodong, Li, Botong, Ma, Yongjian, Zhang, Li, Chen, Tiwei, Zhou, Xin, Bian, Chunxu, Hu, Yu, Chen, Duanyang, Qi, Hongji, Zeng, Zhongming, Zhang, Baoshun
Published in Journal of semiconductors (01.06.2023)
Published in Journal of semiconductors (01.06.2023)
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Journal Article
702.3 A·cm⁻²/10.4 mΩ·cm² β -Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
Ma, Yongjian, Zhou, Xuanze, Tang, Wenbo, Zhang, Xiaodong, Xu, Guangwei, Zhang, Li, Chen, Tiwei, Dai, Shige, Bian, Chunxu, Li, Botong, Zeng, Zhongming, Long, Shibing
Published in IEEE electron device letters (01.03.2023)
Published in IEEE electron device letters (01.03.2023)
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Journal Article
702.3 A∙cm-2/10.4 mΩ∙cm2 Vertical β-Ga2O3 U-Shape Trench Gate MOSFET with N-Ion Implantation
Ma, Yongjian, Zhou, Xuanze, Tang, Wenbo, Zhang, Xiaodong, Xu, Guangwei, Zhang, Li, Chen, Tiwei, Dai, Shige, Bian, Chunxu, Li, Botong, Zeng, Zhongming, Long, Shibing
Published in IEEE electron device letters (09.01.2023)
Published in IEEE electron device letters (09.01.2023)
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Journal Article
Effect of RF power and gas ratio on the sidewall of β-Ga2O3 films via inductively coupled plasma etching
Bian, Chunxu, Zhang, Xiaodong, Tang, Wenbo, Zhang, Li, Ma, Yongjian, Chen, Tiwei, Zhou, Xin, Li, Botong, Tang, Jilong, Zeng, Zhongming, Zhang, Baoshun
Published in Japanese Journal of Applied Physics (01.01.2023)
Published in Japanese Journal of Applied Physics (01.01.2023)
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Journal Article
Effect of RF power and gas ratio on the sidewall of β-Ga 2 O 3 films via inductively coupled plasma etching
Bian, Chunxu, Zhang, Xiaodong, Tang, Wenbo, Zhang, Li, Ma, Yongjian, Chen, Tiwei, Zhou, Xin, Li, Botong, Tang, Jilong, Zeng, Zhongming, Zhang, Baoshun
Published in Japanese Journal of Applied Physics (01.01.2023)
Published in Japanese Journal of Applied Physics (01.01.2023)
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Journal Article
A comprehensive review of recent progress on enhancement-mode β-Ga 2 O 3 FETs: Growth, devices and properties
Li, Botong, Zhang, Xiaodong, Zhang, Li, Ma, Yongjian, Tang, Wenbo, Chen, Tiwei, Hu, Yu, Zhou, Xin, Bian, Chunxu, Zeng, Chunhong, Ju, Tao, Zeng, Zhongming, Zhang, Baoshun
Published in Journal of semiconductors (01.06.2023)
Published in Journal of semiconductors (01.06.2023)
Get full text
Journal Article
Homoepitaxial growth of (100) Si-doped β-Ga 2 O 3 films via MOCVD
Tang, Wenbo, Han, Xueli, Zhang, Xiaodong, Li, Botong, Ma, Yongjian, Zhang, Li, Chen, Tiwei, Zhou, Xin, Bian, Chunxu, Hu, Yu, Chen, Duanyang, Qi, Hongji, Zeng, Zhongming, Zhang, Baoshun
Published in Journal of semiconductors (01.06.2023)
Published in Journal of semiconductors (01.06.2023)
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Journal Article