Electronic switching in phase-change memories
Pirovano, A., Lacaita, A.L., Benvenuti, A., Pellizzer, F., Bez, R.
Published in IEEE transactions on electron devices (01.03.2004)
Published in IEEE transactions on electron devices (01.03.2004)
Get full text
Journal Article
Introduction to flash memory
Bez, R., Camerlenghi, E., Modelli, A., Visconti, A.
Published in Proceedings of the IEEE (01.04.2003)
Published in Proceedings of the IEEE (01.04.2003)
Get full text
Journal Article
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
Pirovano, A., Lacaita, A.L., Pellizzer, F., Kostylev, S.A., Benvenuti, A., Bez, R.
Published in IEEE transactions on electron devices (01.05.2004)
Published in IEEE transactions on electron devices (01.05.2004)
Get full text
Journal Article
Structural, magnetic, and electronic properties of high moment FeCo nanoparticles
Zehani, K., Bez, R., Boutahar, A., Hlil, E.K., Lassri, H., Moscovici, J., Mliki, N., Bessais, L.
Published in Journal of alloys and compounds (05.04.2014)
Published in Journal of alloys and compounds (05.04.2014)
Get full text
Journal Article
Influence of Al substitution on magnetocaloric effect of Pr2Fe17−xAlx
Guetari, R., Bez, R., Belhadj, A., Zehani, K., Bezergheanu, A., Mliki, N., Bessais, L., Cizmas, C.B.
Published in Journal of alloys and compounds (05.03.2014)
Published in Journal of alloys and compounds (05.03.2014)
Get full text
Journal Article
Electronic switching effect and phase-change transition in chalcogenide materials
Redaelli, A., Pirovano, A., Pellizzer, F., Lacaita, A.L., Ielmini, D., Bez, R.
Published in IEEE electron device letters (01.10.2004)
Published in IEEE electron device letters (01.10.2004)
Get full text
Journal Article
Analysis of phase distribution in phase-change nonvolatile memories
Ielmini, D., Lacaita, A.L., Pirovano, A., Pellizzer, F., Bez, R.
Published in IEEE electron device letters (01.07.2004)
Published in IEEE electron device letters (01.07.2004)
Get full text
Journal Article
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes
Dumas, C., Deleruyelle, D., Demolliens, A., Muller, Ch, Spiga, S., Cianci, E., Fanciulli, M., Tortorelli, I., Bez, R.
Published in Thin solid films (31.03.2011)
Published in Thin solid films (31.03.2011)
Get full text
Journal Article
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films
Privitera, S., Rimini, E., Bongiorno, C., Pirovano, A., Bez, R.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.04.2007)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.04.2007)
Get full text
Journal Article
Games in the environmental context and their strategic use for environmental education
Branco, M A A, Weyermüller, A R, Müller, E F, Schneider, G T, Hupffer, H M, Delgado, J, Mossman, J B, Bez, M R, Mendes, T G
Published in Brazilian journal of biology (01.05.2015)
Published in Brazilian journal of biology (01.05.2015)
Get full text
Journal Article
Data Retention Characterization of Phase-Change Memory Arrays
Gleixner, B., Pirovano, A., Sarkar, J., Ottogalli, F., Tortorelli, E., Tosi, M., Bez, R.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Get full text
Conference Proceeding
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics
Mantegazza, D., Ielmini, D., Pirovano, A., Lacaita, A.L., Varesi, E., Pellizzer, F., Bez, R.
Published in Solid-state electronics (01.04.2008)
Published in Solid-state electronics (01.04.2008)
Get full text
Journal Article
Conference Proceeding
Status and Perspectives of Chalcogenide-based CrossPoint Memories
Pellizzer, F., Pirovano, A., Bez, R., Meyer, R. L.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Get full text
Conference Proceeding
Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond
PIROVANO, A, PELLIZZER, F, MARANGON, T, BEDESCHI, F, FACKENTHAL, R, ATWOOD, G, BEZ, R, TORTORELLI, I, RIGANO, A, HARRIGAN, R, MAGISTRETTI, M, PETRUZZA, P, VARESI, E, REDAELLI, A, ERBETTA, D
Published in Solid-state electronics (01.09.2008)
Published in Solid-state electronics (01.09.2008)
Get full text
Conference Proceeding
A new 40-nm SONOS structure based on backside trapping for nanoscale memories
Ranica, R., Villaret, A., Mazoyer, P., Monfray, S., Chanemougame, D., Masson, P., Regnier, A., Dray, C.N., Bez, R., Skotnicki, T.
Published in IEEE transactions on nanotechnology (01.09.2005)
Published in IEEE transactions on nanotechnology (01.09.2005)
Get full text
Journal Article
A physically-based model of the effective mobility in heavily-doped n-MOSFETs
Villa, S., Lacaita, A.L., Perron, L.M., Bez, R.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
Get full text
Journal Article
4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip
Bedeschi, F., Bez, R., Boffino, C., Bonizzoni, E., Buda, E.C., Casagrande, G., Costa, L., Ferraro, M., Gastaldi, R., Khouri, O., Ottogalli, F., Pellizzer, F., Pirovano, A., Resta, C., Torelli, G., Tosi, M.
Published in IEEE journal of solid-state circuits (01.07.2005)
Published in IEEE journal of solid-state circuits (01.07.2005)
Get full text
Journal Article