Origin of orange color in nominally undoped HVPE GaN crystals
Zimmermann, F., Beyer, F.C., Gärtner, G., Röder, C., Son, N.T., Janzén, E., Veselá, D., Lorinčík, J., Hofmann, P., Krupinski, M., Mikolajick, T., Habel, F., Leibiger, G., Heitmann, J.
Published in Optical materials (01.08.2017)
Published in Optical materials (01.08.2017)
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Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Pedersen, H., Leone, S., Henry, A., Beyer, F.C., Darakchieva, V., Janzén, E.
Published in Journal of crystal growth (15.09.2007)
Published in Journal of crystal growth (15.09.2007)
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Retrospective Study of Ipsilateral Breast Tumor Recurrence in Patients Undergoing Accelerated Partial Breast Irradiation Delivered via Balloon Brachytherapy in a Community Hospital
Eshleman, J.S, Shuman, T.P, Berkenstock, K.G, Singapuri, K.P, Newman, P.G, Parker, S.L, Chory, E.T, Beyer, F.C, Horst, M.A, Dodge, D.G
Published in International journal of radiation oncology, biology, physics (01.10.2013)
Published in International journal of radiation oncology, biology, physics (01.10.2013)
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Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy
Lukin, G., Schneider, T., Förste, M., Barchuk, M., Schimpf, C., Röder, C., Zimmermann, F., Niederschlag, E., Pätzold, O., Beyer, F.C., Rafaja, D., Stelter, M.
Published in Journal of crystal growth (15.10.2019)
Published in Journal of crystal growth (15.10.2019)
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Journal Article
Green coloring of GaN single crystals introduced by Cr impurity
Zimmermann, F., Gärtner, G., Sträter, H., Röder, C., Barchuk, M., Bastin, D., Hofmann, P., Krupinski, M., Mikolajick, T., Heitmann, J., Beyer, F.C.
Published in Journal of luminescence (01.03.2019)
Published in Journal of luminescence (01.03.2019)
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Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC
Leone, S., Beyer, F.C., Pedersen, H., Andersson, S., Kordina, O., Henry, A., Janzén, E.
Published in Thin solid films (01.03.2011)
Published in Thin solid films (01.03.2011)
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Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
Leone, S., Beyer, F.C., Pedersen, H., Kordina, O., Henry, A., Janzén, E.
Published in Materials research bulletin (01.08.2011)
Published in Materials research bulletin (01.08.2011)
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Journal Article
Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Pedersen, H., Beyer, F.C., Henry, A., Janzén, E.
Published in Journal of crystal growth (15.06.2009)
Published in Journal of crystal growth (15.06.2009)
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Journal Article
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Pedersen, H., Beyer, F.C., Hassan, J., Henry, A., Janzén, E.
Published in Journal of crystal growth (15.02.2009)
Published in Journal of crystal growth (15.02.2009)
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