Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement
Bethoux, J.-M., Happy, H., Dambrine, G., Derycke, V., Goffman, M., Bourgoin, J.-P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2006)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2006)
Get full text
Journal Article
Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures
Vennéguès, P., Bougrioua, Z., Bethoux, J. M., Azize, M., Tottereau, O.
Published in Journal of applied physics (15.01.2005)
Published in Journal of applied physics (15.01.2005)
Get full text
Journal Article
Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors
Curutchet, A., Theron, D., Werquin, M., Ducatteau, D., Happy, H., Dambrine, G., Bethoux, J.M., Derycke, V., Gaquiere, C.
Published in IEEE transactions on microwave theory and techniques (01.07.2008)
Published in IEEE transactions on microwave theory and techniques (01.07.2008)
Get full text
Journal Article
An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications
Bethoux, J.-M., Happy, H., Dambrine, G., Derycke, V., Goffman, M., Bourgoin, J.-P.
Published in IEEE electron device letters (01.08.2006)
Published in IEEE electron device letters (01.08.2006)
Get full text
Journal Article
An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications
BETHOUX, J.-M, HAPPY, H, DAMBRINE, G, DERYCKE, V, GOFFMAN, M, BOURGOIN, J.-P
Published in IEEE electron device letters (01.08.2006)
Published in IEEE electron device letters (01.08.2006)
Get full text
Journal Article
Carbon nanotube field-effect transistor for GHz operation
Bethoux, J.-M., Happy, H., Dambrine, G., Borghetti, J., Derycke, V., Goffman, M., Bourgoin, J.-P.
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Get full text
Conference Proceeding
SmartSiC™ for Manufacturing of SiC Power Devices
Daval, N., Drouin, A., Biard, H., Viravaux, L., Radisson, D., Rouchier, S., Gaudin, G., Widiez, J., Allibert, F., Rolland, E., Vladimirova, K., Gelineau, G., Troutot, N., Navone, C., Berre, G., Bosch, D., Leow, Y.L, Duboust, A., Bethoux, J-M., Boulet, R., Chapelle, A., Cela, E., Lavaitte, G., Bouville-Lallart, A., Bhargava, S., Schwarzenbach, W., Maddalon, C., Radu, I., Odoul, S., Delprat, D., Bonnin, O., Maleville, C.
Published in 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (06.03.2022)
Published in 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (06.03.2022)
Get full text
Conference Proceeding
150 mm SiC Engineered Substrates for High-Voltage Power Devices
Rouchier, Séverin, Drouin, Alexis, Bouville-Lallart, Adeline, Vladimirova, Kremena, Troutot, Nicolas, Schwarzenbach, Walter, Lavaitte, Guillaume, Thomas, Shawn, Servant, Florence, Gaudin, Gweltaz, Bosch, Daphnée, Rolland, Emmanuel, Cela, Enrica, Widiez, Julie, Gelineau, Guillaume, Bethoux, Jean Marc, Chapelle, Audrey, Maleville, Christophe, Leow, Yen Lin, Allibert, Frédéric, Boulet, Romain, Berre, Guillaume, Duboust, Alain, Bhargava, Shivan, Viravaux, Laurent, Navone, Christelle, Radu, Ionut
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
Get full text
Journal Article
Ni ∕ Al 0.2 Ga 0.8 N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Boudjelida, B., Gee, I., Evans-Freeman, J., Clark, S. A., Maffeis, T. G. G., Teng, K. S., Wilks, S., Azize, M., Bethoux, J.-M., De Mierry, P.
Published in Journal of applied physics (11.03.2008)
Published in Journal of applied physics (11.03.2008)
Get full text
Journal Article
Ni/Al{sub 0.2}Ga{sub 0.8}N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Boudjelida, B., Gee, I., Evans-Freeman, J., Clark, S. A., Maffeis, T. G. G., Teng, K. S., Wilks, S., Azize, M., Bethoux, J.-M., De Mierry, P.
Published in Journal of applied physics (01.03.2008)
Published in Journal of applied physics (01.03.2008)
Get full text
Journal Article
Characterization of Carbon Nanotube Field Effect Transistors using an active load pull LSNA setup
Gaquiere, C., Curutchet, A., Theron, D., Werquin, M., Ducatteau, D., Bethoux, J. M., Happy, H., Dambrine, G., Derycke, V.
Published in 2008 71st ARFTG Microwave Measurement Conference (01.06.2008)
Published in 2008 71st ARFTG Microwave Measurement Conference (01.06.2008)
Get full text
Conference Proceeding
Directed assembly for carbon nanotube device fabrication
Bourgoin, J.P., Borghetti, J., Chenevier, P., Derycke, V., Filoramo, A., Goux, L., Goffinan, M.F., Lyonnais, S., Nguyen, K., Robert, G., Streiff, S., Bethoux, J.M., Happy, H., Dambrine, G., Lenfant, S., Vuillaume, D.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
Get full text
Conference Proceeding