Improving the ALD-grown Y2O3/Ge interface quality by surface and annealing treatments
Zimmermann, C., Bethge, O., Winkler, K., Lutzer, B., Bertagnolli, E.
Published in Applied surface science (30.04.2016)
Published in Applied surface science (30.04.2016)
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Journal Article
ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell
Bethge, O., Nobile, M., Abermann, S., Glaser, M., Bertagnolli, E.
Published in Solar energy materials and solar cells (01.10.2013)
Published in Solar energy materials and solar cells (01.10.2013)
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Journal Article
Platinum-assisted post deposition annealing of the n-Ge/Y2O3 interface
Zimmermann, C, Bethge, O, Lutzer, B, Bertagnolli, E
Published in Semiconductor science and technology (13.06.2016)
Published in Semiconductor science and technology (13.06.2016)
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Journal Article
Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric
Bethge, O., Henkel, C., Abermann, S., Pozzovivo, G., Stoeger-Pollach, M., Werner, W.S.M., Smoliner, J., Bertagnolli, E.
Published in Applied surface science (01.02.2012)
Published in Applied surface science (01.02.2012)
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Journal Article
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates
Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Lugani, L., Grandjean, N., Bertagnolli, E., Pogany, D., Strasser, G.
Published in Thin solid films (31.07.2012)
Published in Thin solid films (31.07.2012)
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Journal Article
Ge p-MOSFETs With Scaled ALD La2O3/ZrO2 Gate Dielectrics
HENKEL, C, ABERMANN, S, BETHGE, O, POZZOVIVO, G, KLANG, P, REICHE, M, BERTAGNOLLI, E
Published in IEEE transactions on electron devices (01.12.2010)
Published in IEEE transactions on electron devices (01.12.2010)
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Journal Article
Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics
Henkel, C., Abermann, S., Bethge, O., Pozzovivo, G., Klang, P., Stöger-Pollach, M., Bertagnolli, E.
Published in Microelectronic engineering (01.03.2011)
Published in Microelectronic engineering (01.03.2011)
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Journal Article
Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics
ABERMANN, S, POZZOVIVO, G, BERTAGNOLLI, E, KUZMIK, J, OSTERMAIER, C, HENKEL, C, BETHGE, O, STRASSER, G, POGANY, D, CARLIN, J.-F, GRANDJEAN, N
Published in Electronics letters (2009)
Published in Electronics letters (2009)
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Journal Article
Artificial cilia of magnetically tagged polymer nanowires for biomimetic mechanosensing
Schroeder, P, Schotter, J, Shoshi, A, Eggeling, M, Bethge, O, Hütten, A, Brückl, H
Published in Bioinspiration & biomimetics (01.12.2011)
Published in Bioinspiration & biomimetics (01.12.2011)
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Journal Article
Ge p-MOSFETs With Scaled ALD \hbox \hbox/\hbox Gate Dielectrics
Henkel, C, Abermann, S, Bethge, O, Pozzovivo, G, Klang, P, Reiche, M, Bertagnolli, E
Published in IEEE transactions on electron devices (01.12.2010)
Published in IEEE transactions on electron devices (01.12.2010)
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Journal Article
Geometry effects and frequency dependence in scanning capacitance microscopy on GaAs Schottky and metal–oxide–semiconductor-Type junctions
Eckhardt, C., Brezna, W., Silvano, J., Bethge, O., Bertagnolli, E., Smoliner, J.
Published in Physica. E, Low-dimensional systems & nanostructures (01.02.2010)
Published in Physica. E, Low-dimensional systems & nanostructures (01.02.2010)
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Journal Article
Conference Proceeding
Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments
Zimmermann, C., Bethge, O., Winkler, K., Lutzer, B., Bertagnolli, E.
Published in Applied surface science (01.04.2016)
Published in Applied surface science (01.04.2016)
Get full text
Journal Article
Platinum-assisted post deposition annealing of the n-Ge/Y 2 O 3 interface
Zimmermann, C, Bethge, O, Lutzer, B, Bertagnolli, E
Published in Semiconductor science and technology (01.07.2016)
Published in Semiconductor science and technology (01.07.2016)
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Journal Article
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
Capriotti, M., Bahat Treidel, E., Fleury, C., Bethge, O., Ostermaier, C., Rigato, M., Lancaster, S.L.C., Brunner, F., Detz, H., Hilt, O., Würfl, J., Pogany, D., Strasser, G.
Published in Solid-state electronics (01.11.2016)
Published in Solid-state electronics (01.11.2016)
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Journal Article
Ge p-MOSFETs With Scaled ALD [Formula Omitted] Gate Dielectrics
Henkel, C, Abermann, S, Bethge, O, Pozzovivo, G, Klang, P, Reiche, M, Bertagnolli, E
Published in IEEE transactions on electron devices (01.12.2010)
Published in IEEE transactions on electron devices (01.12.2010)
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Journal Article