Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate
Bessolov, V.N., Karpov, D.V., Konenkova, E.V., Lipovskii, A.А., Osipov, A.V., Redkov, A.V., Soshnikov, I.P., Kukushkin, S.A.
Published in Thin solid films (01.05.2016)
Published in Thin solid films (01.05.2016)
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Journal Article
Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates
Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N.
Published in Physics of the solid state (01.04.2017)
Published in Physics of the solid state (01.04.2017)
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Journal Article
Effect of the n- and p-type Si substrates with a sic buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN
Bessolov, V.N, Grashchenko, A.S, Konenkova, E.V, Myasoedov, A.V, Osipov, A.V, Redkov, A.V, Rodin, S.N, Rubetsr, V.P, Kukushkin, S.A
Published in Physics of the solid state (01.10.2015)
Published in Physics of the solid state (01.10.2015)
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Journal Article
Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals
Bessolov, V.N., Konenkova, E.V., Zhilyaev, Yu.V., Paez Sierra, B.A., Zahn, D.R.T.
Published in Applied surface science (15.08.2004)
Published in Applied surface science (15.08.2004)
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Journal Article
METHOD OF LIQUID EPITAXY OF VARYING-ZONE STRUCTURES
LIDEJKIS T.P.,SU, YAKOVLEV YU.P.,SU, BARANOV A.N.,SU, BESSOLOV V.N.,SU
Year of Publication 07.10.1980
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Year of Publication 07.10.1980
Patent
METHOD OF PRODUCING SEMICONDUCTOR STRUCTURE
TSARENKOV B.V.,SU, LIDEJKIS T.P.,SU, YAKOVLEV YU.P.,SU, BARANOV A.N.,SU, BESSOLOV V.N.,SU
Year of Publication 15.06.1980
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Year of Publication 15.06.1980
Patent