Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2021)
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Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers
Sorokin, L. M., Gutkin, M. Yu, Myasoedov, A. V., Kalmykov, A. E., Bessolov, V. N., Kukushkin, S. A.
Published in Physics of the solid state (01.12.2019)
Published in Physics of the solid state (01.12.2019)
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Properties of Semipolar GaN Grown on a Si(100) Substrate
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
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Initial Stages of Growth of the GaN(112) Layer on a Nano-structured Si(113) Substrate
Bessolov, V. N., Konenkova, E. V., Rodin, S. N.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2023)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2023)
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TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates
Myasoedov, A V, Bert, N A, Bessolov, V N
Published in Journal of physics. Conference series (01.12.2020)
Published in Journal of physics. Conference series (01.12.2020)
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Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Solomnikova, A. V.
Published in Technical physics (01.11.2023)
Published in Technical physics (01.11.2023)
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Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate
Bessolov, V.N., Karpov, D.V., Konenkova, E.V., Lipovskii, A.А., Osipov, A.V., Redkov, A.V., Soshnikov, I.P., Kukushkin, S.A.
Published in Thin solid films (01.05.2016)
Published in Thin solid films (01.05.2016)
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SUBSTRATES FOR EPITAXY OF GALLIUM NITRIDE: NEW MATERIALS AND TECHNIQUES
Kukushkin, S A, Osipov, A V, Bessolov, V N, Medvedev, B K, Nevolin, V K, Tcarik, K A
Published in Reviews on advanced materials science (01.03.2008)
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Published in Reviews on advanced materials science (01.03.2008)
Journal Article
TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates
Sorokin, L M, Myasoedov, A V, Kalmykov, A E, Kirilenko, D A, Bessolov, V N, Kukushkin, S A
Published in Semiconductor science and technology (01.11.2015)
Published in Semiconductor science and technology (01.11.2015)
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Journal Article
Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate
Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.
Published in Technical physics letters (01.06.2019)
Published in Technical physics letters (01.06.2019)
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Journal Article
Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering
Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.
Published in Technical physics letters (01.04.2020)
Published in Technical physics letters (01.04.2020)
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Journal Article
Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates
Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N.
Published in Physics of the solid state (01.04.2017)
Published in Physics of the solid state (01.04.2017)
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