The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
Ghezellou, Misagh, Kumar, Piyush, Bathen, Marianne E., Karsthof, Robert, Sveinbjörnsson, Einar Ö., Grossner, Ulrike, Bergman, J. Peder, Vines, Lasse, Ul-Hassan, Jawad
Published in APL materials (01.03.2023)
Published in APL materials (01.03.2023)
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Journal Article
Depth-resolved carrier lifetime measurements in 4H-SiC epilayers monitoring carbon vacancy elimination
Galeckas, Augustinas, Ayedh, Hussein M., Bergman, J. Peder, Svensson, Bengt G.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
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In-grown stacking-faults in 4H-SiC epilayers grown on 2° off-cut substrates
Lilja, Louise, Hassan, Jawad Ul, Janzén, Erik, Bergman, J. Peder
Published in physica status solidi (b) (01.06.2015)
Published in physica status solidi (b) (01.06.2015)
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Journal Article
Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide
Klason, Peter, Moe Børseth, Thomas, Zhao, Qing X., Svensson, Bengt G., Kuznetsov, Andrej Yu, Bergman, Peder J., Willander, Magnus
Published in Solid state communications (2008)
Published in Solid state communications (2008)
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Journal Article
Influence of n-type doping levels on carrier lifetime in 4H-SiC epitaxial layers
Lilja, Louise, Farkas, Ildiko, Booker, Ian, ul Hassan, Jawad, Janzen, Erik, Bergman, Peder
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Nanoscale Light-Harvesting Metal-Organic Frameworks
Zhang, Xuanjun, Ballem, Mohamed Ali, Hu, Zhang-Jun, Bergman, Peder, Uvdal, Kajsa
Published in Angewandte Chemie International Edition (14.06.2011)
Published in Angewandte Chemie International Edition (14.06.2011)
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Journal Article
In-grown stacking-faults in 4H-SiC epilayers grown on 2 degrees off-cut substrates
Lilja, Louise, Ul-Hassan, Jawad, Janzén, Erik, Bergman, Peder
Published in Physica status solidi. B, Basic research (01.06.2015)
Published in Physica status solidi. B, Basic research (01.06.2015)
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Journal Article
Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
BOOKER, Ian D, JAWAD UL HASSAN, LILJA, Louise, BEYER, Franziska C, KARHU, Robin, BERGMAN, J. Peder, DANIELSSON, Örjan, KORDINA, Olof, SVEINBJÖRNSSON, Einar Ö, JANZEN, Erik
Published in Crystal growth & design (06.08.2014)
Published in Crystal growth & design (06.08.2014)
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Journal Article
Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
Booker, Ian Don, Ul Hassan, Jawad, Lilja, Louise, Beyer, Franziska, Karhu, Robin, Bergman, J. Peder, Danielsson, Örjan, Kordina, Olof, Sveinbjörnsson, Einar, Janzén, Erik
Published in Crystal growth & design (01.08.2014)
Published in Crystal growth & design (01.08.2014)
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Journal Article
On-axis homoepitaxial growth on Si-face 4H–SiC substrates
Hassan, J., Bergman, J.P., Henry, A., Janzén, E.
Published in Journal of crystal growth (01.10.2008)
Published in Journal of crystal growth (01.10.2008)
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Journal Article
Characterization of the carrot defect in 4H-SiC epitaxial layers
Hassan, J., Henry, A., McNally, P.J., Bergman, J.P.
Published in Journal of crystal growth (15.05.2010)
Published in Journal of crystal growth (15.05.2010)
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Journal Article
Carrier Lifetime Controlling Defects Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
Booker, Ian D., Hassan, Jawad Ul, Lilja, Louise, Beyer, Franziska C., Karhu, Robin, Bergman, J. Peder, Danielsson, Örjan, Kordina, Olof, Sveinbjörnsson, Einar Ö., Janzén, Erik
Published in Crystal growth & design (06.08.2014)
Published in Crystal growth & design (06.08.2014)
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Journal Article
The influence of growth conditions on carrier lifetime in 4H–SiC epilayers
Lilja, Louise, Booker, Ian D., Hassan, Jawad ul, Janzén, Erik, Bergman, J. Peder
Published in Journal of crystal growth (15.10.2013)
Published in Journal of crystal growth (15.10.2013)
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Journal Article
In-situ surface preparation of nominally on-axis 4H-SiC substrates
Hassan, J., Bergman, J.P., Henry, A., Janzén, E.
Published in Journal of crystal growth (01.10.2008)
Published in Journal of crystal growth (01.10.2008)
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Journal Article
Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates: Group III Nitrides, SiC and ZnO
SCAJEV, Patrik, HASSAN, Jawad, JARASIUNAS, Kęstutis, KATO, Masashi, HENRY, Anne, PEDER BERGMAN, J
Published in Journal of electronic materials (2011)
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Published in Journal of electronic materials (2011)
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