Search Results - "Bensahel, Daniel" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

by Perniola, Luca, Sousa, Veronique, Fantini, Andrea, Arbaoui, Edrisse, Bastard, Audrey, Armand, Marilyn, Fargeix, Alain, Jahan, Carine, Nodin, Jean-Francois, Persico, Alain, Blachier, Denis, Toffoli, Alain, Loubriat, Sebastien, Gourvest, Emanuel, Betti Beneventi, Giovanni, Feldis, Helene, Maitrejean, Sylvain, Lhostis, Sandrine, Roule, Anne, Cueto, Olga, Reimbold, Gilles, Poupinet, Ludovic, Billon, Thierry, De Salvo, Barbara, Bensahel, Daniel, Mazoyer, Pascale, Annunziata, Roberto, Zuliani, Paola, Boulanger, Fabien
Published in IEEE electron device letters (01.05.2010)

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Journal Article

Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

by Xiaohui Tang, Reckinger, N., Bayot, V., Krzeminski, C., Dubois, E., Villaret, A., Bensahel, D.-C.
Published in IEEE transactions on nanotechnology (01.11.2006)

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Journal Article

High-density oxidized porous silicon

High-density oxidized porous silicon

by Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Semiconductor science and technology (01.10.2012)

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Journal Article

p-type silicon doping profiling using electrochemical anodization

p-type silicon doping profiling using electrochemical anodization

by Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Journal of applied physics (15.01.2011)

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Journal Article

Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization and application to doping profiling

Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization and application to doping profiling

by Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Physica status solidi. C (01.03.2011)

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Journal Article

MOCVD fluorine free WSi x metal gate electrode on high- k dielectric for NMOS technology

MOCVD fluorine free WSi x metal gate electrode on high- k dielectric for NMOS technology

by Gassilloud, R., Martin, F., Leroux, C., Hopstaken, M., Garros, X., Cassé, M., Reimbold, Gilles, Billon, Thierry, Bensahel, Daniel
Published in Microelectronic engineering (2009)

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Journal Article

HCl Selective Etching of Si1-xGex versus Si for Silicon On Nothing and Multi Gate Devices

HCl Selective Etching of Si1-xGex versus Si for Silicon On Nothing and Multi Gate Devices

by Destefanis, Vincent, Hartmann, Jean-Michel, Hüe, Florian, Bensahel, Daniel
Published in ECS transactions (03.10.2008)

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Journal Article

MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

by GASSILLOUD, R, MARTIN, F, LEROUX, C, HOPSTAKEN, M, GARROS, X, CASSE, M, REIMBOLD, Gilles, BILLON, Thierry, BENSAHEL, Daniel
Published in Microelectronic engineering (01.03.2009)

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Conference Proceeding Journal Article

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

by Xiaohui, Tang, Reckinger, Nicolas, Bayot, Vincent, Krzeminski, Christophe, Dubois, Emmanuel, Villaret, Alexandre, Bensahel, Daniel
Published in IEEE transactions on nanotechnology (06.11.2006)

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Journal Article

Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition

Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition

by Pin, Guillaume, Kermarrec, Olivier, Chabanne, Guillaume, Campidelli, Yves, Chevrier, Jean-Baptiste, Billon, Thierry, Bensahel, Daniel
Published in Journal of crystal growth (2006)

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Journal Article

Method for making a semi-conducting substrate located on an insulation layer

Method for making a semi-conducting substrate located on an insulation layer

by HALIMAOUI AOMAR, BENSAHEL DANIEL
Year of Publication 31.05.2016

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Patent

Method for forming integrated circuits on a strained semiconductor substrate

Method for forming integrated circuits on a strained semiconductor substrate

by Bensahel Daniel-Camille, Halimaoui Aomar
Year of Publication 20.12.2016

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Patent

Method for forming integrated circuits on a strained semiconductor substrate

Method for forming integrated circuits on a strained semiconductor substrate

by BENSAHEL DANIEL, HALIMAOUI AOMAR
Year of Publication 09.12.2014

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Patent

METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULATION LAYER

METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULATION LAYER

by HALIMAOUI AOMAR, BENSAHEL DANIEL
Year of Publication 10.10.2013

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Patent

Method for making a semi-conducting substrate located on an insulation layer

Method for making a semi-conducting substrate located on an insulation layer

by HALIMAOUI AOMAR, BENSAHEL DANIEL
Year of Publication 17.09.2013

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Patent

METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE

METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE

by HALIMAOUI AOMAR, BENSAHEL DANIEL-CAMILLE
Year of Publication 26.02.2015

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Patent

Method of fabricating a device with a concentration gradient and the corresponding device

Method of fabricating a device with a concentration gradient and the corresponding device

by MORAND YVES, BENSAHEL DANIEL-CAMILLE
Year of Publication 25.11.2014

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Patent

METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE

METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE

by BENSAHEL DANIEL, HALIMAOUI AOMAR
Year of Publication 19.04.2012

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Patent

METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND THE CORRESPONDING DEVICE

METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND THE CORRESPONDING DEVICE

by MORAND YVES, BENSAHEL DANIEL-CAMILLE
Year of Publication 30.01.2014

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Patent

Method of fabricating a device with a concentration gradient and the corresponding device

Method of fabricating a device with a concentration gradient and the corresponding device

by MORAND YVES, BENSAHEL DANIEL-CAMILLE
Year of Publication 05.11.2013

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Patent

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