Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells
Sun, Haoran, Chen, Yuhui, Ben, Yuhao, Zhang, Hongping, Zhao, Yujie, Jin, Zhihao, Li, Guoqi, Zhou, Mei
Published in Materials (13.02.2023)
Published in Materials (13.02.2023)
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Journal Article
The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si
Zhang, Zhenzhuo, Yang, Jing, Zhao, Degang, Wang, Baibin, Zhang, Yuheng, Liang, Feng, Chen, Ping, Liu, Zongshun, Ben, Yuhao
Published in AIP advances (01.09.2022)
Published in AIP advances (01.09.2022)
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Journal Article
Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells
Wang, Yachen, Liang, Feng, Zhao, Degang, Ben, Yuhao, Yang, Jing, Liu, Zongshun, Chen, Ping
Published in Crystals (Basel) (01.06.2022)
Published in Crystals (Basel) (01.06.2022)
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Journal Article
The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation
Ben, Yuhao, Liang, Feng, Zhao, Degang, Yang, Jing, Chen, Ping, Liu, Zongshun
Published in Crystals (Basel) (01.02.2022)
Published in Crystals (Basel) (01.02.2022)
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Journal Article
Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells
Ben, Yuhao, Liang, Feng, Zhao, Degang, Wang, Xiaowei, Yang, Jing, Liu, Zongshun, Chen, Ping
Published in Nanomaterials (Basel, Switzerland) (16.04.2021)
Published in Nanomaterials (Basel, Switzerland) (16.04.2021)
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Journal Article
Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells
Wang, Yachen, Liang, Feng, Zhao, Degang, Ben, Yuhao, Yang, Jing, Liu, Zongshun, Chen, Ping
Published in Nanomaterials (Basel, Switzerland) (08.09.2022)
Published in Nanomaterials (Basel, Switzerland) (08.09.2022)
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Journal Article
Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN
Wang, Baibin, Liang, Feng, Zhao, Degang, Ben, Yuhao, Yang, Jing, Chen, Ping, Liu, Zongshun
Published in Optics express (01.02.2021)
Published in Optics express (01.02.2021)
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Journal Article
The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes
Ben, Yuhao, Liang, Feng, Zhao, Degang, Yang, Jing, Liu, Zongshun, Chen, Ping
Published in Optics and laser technology (01.01.2022)
Published in Optics and laser technology (01.01.2022)
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Journal Article
Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes
Ben, Yuhao, Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Xing, Yao, Liu, Shuangtao
Published in Superlattices and microstructures (01.09.2019)
Published in Superlattices and microstructures (01.09.2019)
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Journal Article
Gallium nitride-based laser and preparation method thereof
ZHAO DEGANG, CHEN PING, LIANG FENG, LIU ZONGSHUN, YANG JING, BEN YUHAO
Year of Publication 17.11.2023
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Year of Publication 17.11.2023
Patent
InGaN/GaN quantum well structure and preparation method and application thereof
ZHAO DEGANG, CHEN PING, LIANG FENG, LIU ZONGSHUN, YANG JING, BEN YUHAO
Year of Publication 08.08.2023
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Year of Publication 08.08.2023
Patent
GaN-based laser with asymmetric In component InGaN waveguide layer
ZHAO DEGANG, CHEN PING, LIANG FENG, LIU ZONGSHUN, YANG JING, ZHU JIANJUN, BEN YUHAO
Year of Publication 06.11.2020
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Year of Publication 06.11.2020
Patent