Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers
Vainberg, V.V., Pylypchuk, O.S., Poroshin, V.N., Belevski, P.A., Vinoslavski, M.N.
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2024)
Published in Physica. E, Low-dimensional systems & nanostructures (01.05.2024)
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