Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures
Azaizia, S, Balocchi, A, Mazzucato, S, Cadiz, F, Beato de le Salle, F, Lehec, H, Lagarde, D, Arnoult, A, Amand, T, Fontaine, C, Carrère, H, Marie, X
Published in Semiconductor science and technology (01.11.2018)
Published in Semiconductor science and technology (01.11.2018)
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