Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
Paskaleva, Albena, Rommel, Mathias, Hutzler, Andreas, Spassov, Dencho, Bauer, Anton J
Published in ACS applied materials & interfaces (12.08.2015)
Published in ACS applied materials & interfaces (12.08.2015)
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Journal Article
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
Weisse, Julietta, Sledziewski, Tomasz, Frey, Lothar, Tschiesche, Mattias, Krieger, Michael, Mitlehner, Heinz, Erlbacher, Tobias, Hauck, Martin, Bauer, Anton J.
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
Frey, Lothar, Bauer, Anton J., Erlbacher, Tobias, Albrecht, Matthaeus
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Validation of an enzyme-linked immunosorbent assay (ELISA) for quantification of endostatin levels in mice as a biomarker of developing glomerulonephritis
Wallwitz, Jacqueline, Aigner, Petra, Gadermaier, Elisabeth, Bauer, Eva, Casanova, Emilio, Bauer, Anton, Stoiber, Dagmar
Published in PloS one (12.08.2019)
Published in PloS one (12.08.2019)
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Journal Article
Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC
Rommel, Mathias, Erlbacher, Tobias, Rusch, Oleg, Hellinger, Carsten, Bauer, Anton J.
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping
Rommel, Mathias, Erlbacher, Tobias, Kallinger, Birgit, Kocher, Matthias, Bauer, Anton J., Schlichting, Holger
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Channeling in 4H-SiC from an Application Point of View
Bauer, Anton J., Erlbacher, Tobias, Sledziewski, Tomasz, Pichler, Peter, Häublein, Volker
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Reduced On Resistance in LDMOS Devices by Integrating Trench Gates Into Planar Technology
Erlbacher, Tobias, Bauer, Anton J, Frey, Lothar
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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Journal Article
Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K
Matthus, Christian D., Di Benedetto, Luigi, Kocher, Matthias, Bauer, Anton J., Licciardo, Gian Domenico, Rubino, Alfredo, Erlbacher, Tobias
Published in IEEE sensors journal (15.04.2019)
Published in IEEE sensors journal (15.04.2019)
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Journal Article
On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
Weisse, Julietta, Sledziewski, Tomasz, Krieger, Michael, Bauer, Anton J., Mitlehner, Heinz, Frey, Lothar, Erlbacher, Tobias, Hauck, Martin
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
Bauer, Anton J., Erlbacher, Tobias, Rommel, Mathias, Kocher, Matthias
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
FiNGS: high quality somatic mutations using filters for next generation sequencing
Wardell, Christopher Paul, Ashby, Cody, Bauer, Michael Anton
Published in BMC bioinformatics (18.02.2021)
Published in BMC bioinformatics (18.02.2021)
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Journal Article
Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
Rommel, Mathias, Erlbacher, Tobias, Bauer, Anton J., Kim, Seong Jun, Lim, Min Who, Shin, Hoon Kyu, Sledziewski, Tomasz, Kim, Hong Ki
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article