The Sensitivity of Thermal Donor Generation in Silicon to Self-interstitial Sinks
Voronkov, V. V., Voronkova, G. I., Batunina, A. V., Falster, R., Golovina, V. N., Guliaeva, A. S., Tiurina, N. B., Milvidski, M. G.
Published in Journal of the Electrochemical Society (01.10.2000)
Published in Journal of the Electrochemical Society (01.10.2000)
Get full text
Journal Article
Shallow thermal donors in nitrogen-doped silicon single crystals
Voronkov, V. V., Voronkova, G. I., Batunina, A. V., Golovina, V. N., Arapkina, L. V., Tyurina, N. B., Gulyaeva, A. S., Mil’vidskii, M. G.
Published in Physics of the solid state (01.04.2002)
Published in Physics of the solid state (01.04.2002)
Get full text
Journal Article
Lifetime degradation mechanism in boron-doped Czochralski silicon
Voronkov, V.V., Falster, R., Batunina, A.V., Macdonald, D., Bothe, K., Schmidt, J.
Published in Energy procedia (2011)
Published in Energy procedia (2011)
Get full text
Journal Article
Generation of thermal donors in silicon: Effect of self-interstitials
Voronkov, V. V., Voronkova, G. I., Batunina, A. V., Golovina, V. N., Mil’vidskii, M. G., Gulyaeva, A. S., Tyurina, N. B., Arapkina, L. V.
Published in Physics of the solid state (01.01.2000)
Published in Physics of the solid state (01.01.2000)
Get full text
Journal Article
(Invited) Lifetime Degradation in Boron Doped Czochralski Silicon
Voronkov, Vladimir V., Falster, Robert J., Schmidt, Jan, Bothe, Karsten, Batunina, Anna
Published in ECS transactions (01.10.2010)
Published in ECS transactions (01.10.2010)
Get full text
Journal Article
Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 °C
Voronkova, G.I., Batunina, A.V., Voronkov, V.V., Falster, R., Golovina, V.N., Guliaeva, A.S., Tiurina, N.B.
Published in Thin solid films (26.02.2010)
Published in Thin solid films (26.02.2010)
Get full text
Journal Article
Deep level generation in nitrogen-doped float-zoned silicon
Voronkova, G.I., Batunina, A.V., Moiraghi, L., Voronkov, V.V., Falster, R., Milvidski, M.G.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2006)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2006)
Get full text
Journal Article
Effect of annealing on the electrical properties of nitrogen-doped silicon single crystals grown by crucibleless zone melting
Voronkova, G. I., Batunina, A. V., Voronkov, V. V., Golovina, V. N., Gulyaeva, A. S., Tyurina, N. B., Mil’vidskiĭ, M. G.
Published in Physics of the solid state (01.11.2009)
Published in Physics of the solid state (01.11.2009)
Get full text
Journal Article
Advanced Application of Resistivity and Hall Effect Measurements to Characterization of Silicon
Voronkov, Vladimir V., Voronkova, Galina I., Batunina, Anna V., Falster, Robert
Published in ECS transactions (01.01.2009)
Published in ECS transactions (01.01.2009)
Get full text
Journal Article
Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 °C
VORONKOVA, G. I, BATUNINA, A. V, VORONKOV, V. V, FALSTER, R, GOLOVINA, V. N, GULIAEVA, A. S, TIURINA, N. B
Published in Thin solid films (2010)
Get full text
Published in Thin solid films (2010)
Conference Proceeding