Brief Review of Surface Passivation on III-V Semiconductor
Zhou, Lu, Bo, Baoxue, Yan, Xingzhen, Wang, Chao, Chi, Yaodan, Yang, Xiaotian
Published in Crystals (Basel) (01.05.2018)
Published in Crystals (Basel) (01.05.2018)
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Journal Article
Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals
Li, Ji, Wang, Li, Yuan, Xi, Bo, Baoxue, Li, Haibo, Zhao, Jialong, Gao, Xin
Published in Materials research bulletin (01.06.2018)
Published in Materials research bulletin (01.06.2018)
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Journal Article
Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide
Qiao, Zhongliang, Li, Xiang, Sia, Jia Xu Brian, Wang, Wanjun, Wang, Hong, Li, Zaijin, Zhao, Zhibin, Li, Lin, Gao, Xin, Bo, Baoxue, Qu, Yi, Liu, Guojin, Liu, Chongyang
Published in Scientific reports (23.03.2022)
Published in Scientific reports (23.03.2022)
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Journal Article
Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror
Qingsong, Jia, Tianshu, Wang, Wanzhuo, Ma, Zhen, Wang, Qingchao, Su, Baoxue, Bo, Huilin, Jiang
Published in IEEE photonics journal (01.06.2017)
Published in IEEE photonics journal (01.06.2017)
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Journal Article
Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser
Qiao, Zhongliang, Li, Xiang, Sia, Jia Xubrian, Wang, Wanjun, Wang, Hong, Li, Lin, Li, Zaijin, Zhao, Zhibin, Qu, Yi, Gao, Xin, Bo, Baoxue, Liu, Chongyang
Published in IEEE access (2021)
Published in IEEE access (2021)
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Journal Article
Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation
Xu, Yumeng, Gao, Xin, Zhang, Xiaolei, Qiao, Zhongliang, Zhang, Jing, Zhou, Lu, Bo, Baoxue
Published in Crystals (Basel) (01.09.2018)
Published in Crystals (Basel) (01.09.2018)
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Journal Article
Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures
Li, Junmei, Guo, Wei, Jiang, Jie an, Gao, Pingqi, Bo, Baoxue, Ye, Jichun
Published in Japanese Journal of Applied Physics (01.03.2018)
Published in Japanese Journal of Applied Physics (01.03.2018)
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Journal Article
InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering
Zhou, Lu, Gao, Xin, Xu, Liuyang, Qiao, Zhongliang, Bo, Baoxue
Published in Solid-state electronics (01.11.2013)
Published in Solid-state electronics (01.11.2013)
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Journal Article
Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing
Qiao, Zhongliang, Tang, Xiaohong, Li, Xiang, Bo, Baoxue, Gao, Xin, Qu, Yi, Liu, Chongyang, Wang, Hong
Published in IEEE journal of the Electron Devices Society (01.03.2017)
Published in IEEE journal of the Electron Devices Society (01.03.2017)
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Journal Article
Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier
Zhang, Siyu, Qiao, Zhongliang, Bo, Baoxue, Gao, Xin, Qu, Yi, Liu, Guojun
Published in Journal of lightwave technology (15.12.2011)
Published in Journal of lightwave technology (15.12.2011)
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Journal Article
Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers
Baoxue, B., Xin, G., Ling, W., Hui, L., Yi, Q.
Published in IEEE photonics technology letters (01.05.2004)
Published in IEEE photonics technology letters (01.05.2004)
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Journal Article
High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm
Qu, Y., Yuan, S., Liu, C.Y., Bo, B., Liu, G., Jiang, H.
Published in IEEE photonics technology letters (01.02.2004)
Published in IEEE photonics technology letters (01.02.2004)
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Journal Article
MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N2 ambient
XIAOHONG TANG, BAOLIN ZHANG, BAOXUE BO, TING MEI, CHIN, Mee-Koy
Published in Journal of crystal growth (02.02.2006)
Published in Journal of crystal growth (02.02.2006)
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Conference Proceeding
Journal Article
Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N2 ambient
Bo, Baoxue, Tang, Xiaohong, Zhang, Baolin, Huang, Gensheng, Zhang, Yuanchang, Chuan, Tjin Swee
Published in Journal of crystal growth (01.08.2004)
Published in Journal of crystal growth (01.08.2004)
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Conference Proceeding
Journal Article