A Charge-Plasma-Based Transistor With Induced Graded Channel for Enhanced Analog Performance
Shan, Chan, Wang, Ying, Bao, Meng-Tian
Published in IEEE transactions on electron devices (01.06.2016)
Published in IEEE transactions on electron devices (01.06.2016)
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Journal Article
Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET
Yu, Cheng-Hao, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Cao, Fei
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
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Journal Article
Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance
Zhou, Jian-Cheng, Wang, Ying, Li, Xing-Ji, Yang, Jian-Qun, Bao, Meng-Tian, Cao, Fei
Published in IEEE transactions on electron devices (01.06.2022)
Published in IEEE transactions on electron devices (01.06.2022)
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Journal Article
Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices
Bi, Jian-Xiong, Wang, Ying, Wu, Xue, Li, Xing-ji, Yang, Jian-qun, Bao, Meng-Tian, Cao, Fei
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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Journal Article
Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes
Wang, Ying, Chen, Ke-Han, Bao, Meng-Tian, Fei, Xin-Xing, Cao, Fei
Published in IEEE transactions on electron devices (01.10.2022)
Published in IEEE transactions on electron devices (01.10.2022)
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Journal Article
Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS
Yu, Cheng-Hao, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Tang, Zhao-Huan
Published in IEEE transactions on electron devices (01.10.2021)
Published in IEEE transactions on electron devices (01.10.2021)
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Journal Article
A Snapback Suppressed RC-IGBT With N-Si/n-Ge Heterojunction at Low Temperature
Zhang, Xiao-Dong, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Cao, Fei
Published in IEEE transactions on electron devices (01.10.2021)
Published in IEEE transactions on electron devices (01.10.2021)
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Journal Article
Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
Yu, Cheng-Hao, Wang, Ying, Bao, Meng-Tian, Li, Xing-Ji, Yang, Jian-Qun, Tang, Zhao-Huan
Published in IEEE transactions on electron devices (01.07.2021)
Published in IEEE transactions on electron devices (01.07.2021)
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Journal Article
Improving breakdown performance for SOI LDMOS with sidewall field plate
Tang, Pan-pan, Wang, Ying, Bao, Meng-tian, Luo, Xin, Cao, Fei, Yu, Cheng-hao
Published in Micro & nano letters (01.04.2019)
Published in Micro & nano letters (01.04.2019)
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Journal Article
Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness
Chen, Jia-Hao, Wang, Ying, Fei, Xin-Xing, Bao, Meng-Tian, Cao, Fei
Published in Chinese physics B (01.09.2023)
Published in Chinese physics B (01.09.2023)
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Journal Article
An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance
Cao, Fei, Bao, Meng-tian, Wu, Xue, Wang, Wen-Ju, Yu, Cheng-Hao, Wang, Ying
Published in IEEE access (2019)
Published in IEEE access (2019)
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Journal Article
An Improved V CE – E OFF Tradeoff and Snapback-Free RC-IGBT With P⁺ Pillars
Zhang, Xiao-Dong, Wang, Ying, Wu, Xue, Bao, Meng-Tian, Yu, Cheng-Hao, Cao, Fei
Published in IEEE transactions on electron devices (01.07.2020)
Published in IEEE transactions on electron devices (01.07.2020)
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Journal Article
Single-event burnout hardening of RC-IGBT with the raised N-buffer layer
Zhang, Xiao-Dong, Wang, Ying, Bao, Meng-Tian, Li, Xing-ji, Yang, Jian-qun, Cao, Fei
Published in Microelectronics and reliability (01.12.2022)
Published in Microelectronics and reliability (01.12.2022)
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Journal Article
Analysis of radiation effect of a novel SOI-Like LDMOS structure
Yang, Yang, Wang, Ying, Yu, Cheng-Hao, Bao, Meng-Tian, Cao, Fei
Published in Microelectronics and reliability (01.02.2022)
Published in Microelectronics and reliability (01.02.2022)
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Journal Article
Research of single-event burnout and hardened GaN MISFET with embedded PN junction
Fei, Xin-Xing, Wang, Ying, Luo, Xin, Bao, Meng-Tian, Yu, Cheng-Hao, Li, Xing-Ji
Published in Microelectronics and reliability (01.07.2020)
Published in Microelectronics and reliability (01.07.2020)
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Journal Article
TCAD evaluation of single-event burnout hardening design for SiC Schottky diodes
Chen, Jia-Hao, Wang, Ying, Guo, Hao-min, Fei, Xin-Xing, Yu, Cheng-hao, Bao, Meng-Tian
Published in Microelectronics and reliability (01.12.2022)
Published in Microelectronics and reliability (01.12.2022)
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