Punch-through in short-channel AlGaN/GaN HFETs
Uren, M.J., Nash, K.J., Balmer, R.S., Martin, T., Morvan, E., Caillas, N., Delage, S.L., Ducatteau, D., Grimbert, B., De Jaeger, J.C.
Published in IEEE transactions on electron devices (01.02.2006)
Published in IEEE transactions on electron devices (01.02.2006)
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Journal Article
Diamond MISFET based on boron delta-doped channel
El-Hajj, H., Denisenko, A., Kaiser, A., Balmer, R.S., Kohn, E.
Published in Diamond and related materials (01.07.2008)
Published in Diamond and related materials (01.07.2008)
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Journal Article
Conference Proceeding
Surface leakage currents in SiNx passivated AlGaN/GaN HFETs
TAN, W. S, UREN, M. J, HOUSTON, P. A, GREEN, R. T, BALMER, R. S, MARTIN, T
Published in IEEE electron device letters (2006)
Published in IEEE electron device letters (2006)
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Journal Article
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Kuball, M., Hayes, J.M., Uren, M.J., Martin, I., Birbeck, J.C.H., Balmer, R.S., Hughes, B.T.
Published in IEEE electron device letters (01.01.2002)
Published in IEEE electron device letters (01.01.2002)
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Journal Article
Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis
Rashid, S.J., Tajani, A., Twitchen, D.J., Coulbeck, L., Udrea, F., Butler, T., Rupesinghe, N.L., Brezeanu, M., Isberg, J., Garraway, A., Dixon, M., Balmer, R.S., Chamund, D., Taylor, P., Amaratunga, G.
Published in IEEE transactions on electron devices (01.10.2008)
Published in IEEE transactions on electron devices (01.10.2008)
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Journal Article
A lateral time-of-flight system for charge transport studies
Isberg, J., Majdi, S., Gabrysch, M., Friel, I., Balmer, R.S.
Published in Diamond and related materials (01.09.2009)
Published in Diamond and related materials (01.09.2009)
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Journal Article
Chemical vapour deposition synthetic diamond: materials, technology and applications
Balmer, R S, Brandon, J R, Clewes, S L, Dhillon, H K, Dodson, J M, Friel, I, Inglis, P N, Madgwick, T D, Markham, M L, Mollart, T P, Perkins, N, Scarsbrook, G A, Twitchen, D J, Whitehead, A J, Wilman, J J, Woollard, S M
Published in Journal of physics. Condensed matter (09.09.2009)
Published in Journal of physics. Condensed matter (09.09.2009)
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Journal Article
Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors
Balmer, R S, Hilton, K P, Nash, K J, Uren, M J, Wallis, D J, Lee, D, Wells, A, Missous, M, Martin, T
Published in Semiconductor science and technology (01.06.2004)
Published in Semiconductor science and technology (01.06.2004)
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Journal Article
Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs
Wells, A.M., Uren, M.J., Balmer, R.S., Hilton, K.P., Martin, T., Missous, M.
Published in Solid-state electronics (01.02.2005)
Published in Solid-state electronics (01.02.2005)
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Journal Article
Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry
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Journal Article
Conference Proceeding
Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run
Balmer, R.S., Heaton, J.M., Maclean, J.O., Ayling, S.G., Newey, J.P., Houlton, M., Calcott, P.D.J., Wight, D.R., Martin, T.
Published in Journal of lightwave technology (01.01.2003)
Published in Journal of lightwave technology (01.01.2003)
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Journal Article
High temperature performance of AlGaN/GaN HEMTs on Si substrates
Tan, W.S., Uren, M.J., Fry, P.W., Houston, P.A., Balmer, R.S., Martin, T.
Published in Solid-state electronics (01.03.2006)
Published in Solid-state electronics (01.03.2006)
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Journal Article
Experimental gallium nitride microwave Doherty amplifier
LEES, J, BENEDIKT, J, HILTON, K. P, POWELL, J, BALMER, R. S, UREN, M. J, MARTIN, T, TASKER, P. J
Published in Electronics letters (2005)
Published in Electronics letters (2005)
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Journal Article
Unlocking diamond's potential as an electronic material
Balmer, R.S, Friel, I, Woollard, S.M, Wort, C.J.H, Scarsbrook, G.A, Coe, S.E, El-Hajj, H, Kaiser, A, Denisenko, A, Kohn, E, Isberg, J
Published in Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences (28.01.2008)
Published in Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences (28.01.2008)
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Journal Article
In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs
Balmer, R.S., Pickering, C., Kier, A.M., Birbeck, J.C.H., Saker, M., Martin, T.
Published in Journal of crystal growth (01.09.2001)
Published in Journal of crystal growth (01.09.2001)
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Journal Article
Conference Proceeding
Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs
Rajasingam, S., Pomeroy, J.W., Kuball, M., Uren, M.J., Martin, T., Herbert, D.C., Hilton, K.P., Balmer, R.S.
Published in IEEE electron device letters (01.07.2004)
Published in IEEE electron device letters (01.07.2004)
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Journal Article
Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)
Balmer, R.S, Martin, T, Kane, M.J, Maclean, J.O, Whitaker, T.J, Ayling, S.G, Calcott, P.D.J, Houlton, M, Newey, J.P, O'Mahony, S.J
Published in Journal of crystal growth (01.02.2000)
Published in Journal of crystal growth (01.02.2000)
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Journal Article
Conference Proceeding
On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy
Balmer, R. S., Soley, D. E. J., Simons, A. J., Mace, J. D., Koker, L., Jackson, P. O., Wallis, D. J., Uren, M. J., Martin, T.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article