Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance
King, M. P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article
The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process
Ahlbin, J R, Gadlage, M J, Ball, D R, Witulski, A W, Bhuva, B L, Reed, R A, Vizkelethy, G, Massengill, L W
Published in IEEE transactions on nuclear science (01.12.2010)
Published in IEEE transactions on nuclear science (01.12.2010)
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Journal Article
Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage
Harrington, R. C., Kauppila, J. S., Maharrey, J. A., Haeffner, T. D., Sternberg, A. L., Zhang, E. X., Ball, D. R., Nsengiyumva, P., Bhuva, B. L., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.07.2019)
Published in IEEE transactions on nuclear science (01.07.2019)
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Journal Article
Randomized, prospective, observational simulation study comparing residents’ needle-guided vs free-hand ultrasound techniques for central venous catheter access
Ball, R.D., Scouras, N.E., Orebaugh, S., Wilde, J., Sakai, T.
Published in British journal of anaesthesia : BJA (01.01.2012)
Published in British journal of anaesthesia : BJA (01.01.2012)
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Journal Article
Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques
Maharrey, J. A., Kauppila, J. S., Harrington, R. C., Nsengiyumva, P., Ball, D. R., Haeffner, T. D., Zhang, E. X., Bhuva, B. L., Holman, W. T., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.01.2018)
Published in IEEE transactions on nuclear science (01.01.2018)
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Journal Article
On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology
Loveless, T. D., Kauppila, J. S., Jagannathan, S., Ball, D. R., Rowe, J. D., Gaspard, N. J., Atkinson, N. M., Blaine, R. W., Reece, T. R., Ahlbin, J. R., Haeffner, T. D., Alles, M. L., Holman, W. T., Bhuva, B. L., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.12.2012)
Published in IEEE transactions on nuclear science (01.12.2012)
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Journal Article
Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection
Black, J.D., Ball, D.R., Robinson, W.H., Fleetwood, D.M., Schrimpf, R.D., Reed, R.A., Black, D.A., Warren, K.M., Tipton, A.D., Dodd, P.E., Haddad, N.F., Xapsos, M.A., Kim, H.S., Friendlich, M.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs
El-Mamouni, F., Zhang, E. X., Ball, D. R., Sierawski, B., King, M. P., Schrimpf, R. D., Reed, R. A., Alles, M. L., Fleetwood, D. M., Linten, D., Simoen, E., Vizkelethy, G.
Published in IEEE transactions on nuclear science (01.12.2012)
Published in IEEE transactions on nuclear science (01.12.2012)
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Journal Article
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D. R., Hutson, J. M., Javanainen, A., Lauenstein, J.-M., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Sierawski, B. D., Witulski, A. F., Reed, R. A., Schrimpf, R. D.
Published in IEEE transactions on nuclear science (01.01.2020)
Published in IEEE transactions on nuclear science (01.01.2020)
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Journal Article
Study of Multicell Upsets in SRAM at a 5-nm Bulk FinFET Node
Pieper, Nicholas J., Xiong, Yoni, Feeley, Alexandra, Pasternak, John, Dodds, Nathaniel, Ball, D. R., Bhuva, Bharat L.
Published in IEEE transactions on nuclear science (01.04.2023)
Published in IEEE transactions on nuclear science (01.04.2023)
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Journal Article
Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs
Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.
Published in IEEE transactions on nuclear science (01.07.2021)
Published in IEEE transactions on nuclear science (01.07.2021)
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Journal Article