A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density
Khakifirooz, Ali, Anaya, Eduardo, Balasubrahrmanyam, Sriram, Bennett, Geoff, Castro, Daniel, Egler, John, Fan, Kuangchan, Ferdous, Rifat, Ganapathi, Kartik, Guzman, Omar, Ha, Chang Wan, Haque, Rezaul, Harish, Vinaya, Jalalifar, Majid, Jungroth, Owen W., Kang, Sung-Taeg, Karbasian, Golnaz, Kim, Jee-Yeon, Li, Siyue, Madraswala, Aliasgar S., Maddukuri, Srivijay, Mohammed, Amr, Mookiah, Shanmathi, Nagabhushan, Shashi, Ngo, Binh, Patel, Deep, Poosarla, Sai Kumar, Prabhu, Naveen V., Quiroga, Carlos, Rajwade, Shantanu, Rahman, Ahsanur, Shah, Jalpa, Shenoy, Rohit S., Menson, Ebenezer Tachie, Tankasala, Archana, Thirumala, Sandeep Krishna, Upadhyay, Sagar, Upadhyayula, Krishnasree, Velasco, Ashley, Vemula, Nanda Kishore Babu, Venkataramaiah, Bhaskar, Zhou, Jiantao, Pathak, Bharat M., Kalavade, Pranav
Published in 2023 IEEE International Solid- State Circuits Conference (ISSCC) (19.02.2023)
Published in 2023 IEEE International Solid- State Circuits Conference (ISSCC) (19.02.2023)
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