A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model
Rajalakshmi, E., Balamurugan, N.B., Hemalatha, M., Suguna, M.
Published in Microelectronics (01.08.2024)
Published in Microelectronics (01.08.2024)
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Journal Article
An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication
Balamurugan, N.B., Sankaranarayanan, K., Amutha, P., John, M. Fathima
Published in Journal of semiconductor technology and science (30.09.2008)
Published in Journal of semiconductor technology and science (30.09.2008)
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Journal Article
An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication
Balamurugan, N.B, Sankaranarayanan, K, Amutha, P, John, M. Fathima
Published in Journal of semiconductor technology and science (2008)
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Published in Journal of semiconductor technology and science (2008)
Journal Article
COMPARATIVE ANALYSIS OF QUANTUM EFFECTS IN NANOSCALE MULTIGATE MOSFETS USING VARIATIONAL APPROACH
V. PALANICHAMY, N.B. BALAMURUGAN
Published in Journal of engineering science & technology (01.02.2015)
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Published in Journal of engineering science & technology (01.02.2015)
Journal Article