Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET
Zhang, Lu Yang, Renz, A. Benjamin, Baker, G.W.C., Mawby, Philip Andrew, Vavasour, Oliver James, Dai, Tian Xiang, Shah, Vishal A., Gammon, Peter Michael
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition
Baker, G.W.C., Renz, A. Benjamin, Gammon, Peter Michael, Li, Fan, Dai, Tian Xiang, Mawby, Philip Andrew, Grant, Nicholas E., Vavasour, Oliver James, Shah, Vishal A., Murphy, J.D., Esfahani, Siavash
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition
Baker, G.W.C., Gott, James A., Cao, Qinze, Renz, Arne Benjamin, Gammon, Peter Michael, Mawby, Philip Andrew, Dai, Tian Xiang, Vavasour, Oliver James, Shah, Vishal Ajit
Published in Materials science forum (31.05.2023)
Published in Materials science forum (31.05.2023)
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Journal Article
A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
Renz, A. Benjamin, Baker, G.W.C., Rommel, Mathias, Antoniou, Marina, Vavasour, Oliver James, Mawby, Philip Andrew, Dai, Tian Xiang, Li, Fan, Shah, Vishal Ajit, Gammon, Peter Michael
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment
Renz, A. Benjamin, Trajkovic, Tanya, Baker, G.W.C., Pathirana, Vasantha, Bonyadi, Yeganeh, Cao, Qinze, Vavasour, Oliver James, Mawby, Philip Andrew, Pérez-Tomás, Amador, Shah, Vishal Ajit, Gammon, Peter Michael
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2
Renz, A. Benjamin, Baker, G.W.C., Grant, Nicholas, Vavasour, Oliver James, Mawby, Philip Andrew, Dai, Tian Xiang, Murphy, John D., Li, Fan, Shah, Vishal Ajit, Gammon, Peter Michael
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation
Li, Fan, Antoniou, Marina, Qi, Yun Yi, Renz, A. Benjamin, Zhang, Lu Yang, Gammon, Peter Michael, Baker, G.W.C., Shah, Vishal Ajit, Mawby, Philip Andrew, Dai, Tian Xiang
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
Renz, A.B., Vavasour, O.J., Gammon, P.M., Li, F., Dai, T., Antoniou, M., Baker, G.W.C., Bashar, E., Grant, N.E., Murphy, J.D., Mawby, P.A., Shah, V.A.
Published in Materials science in semiconductor processing (01.02.2021)
Published in Materials science in semiconductor processing (01.02.2021)
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Journal Article
Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars
Baker, G.W.C., Renz, A. Benjamin, Mawby, Philip Andrew, Dai, Tian Xiang, Chan, Chun W., Li, Fan, Shah, Vishal Ajit, Gammon, Peter Michael
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis
Renz, A. Benjamin, Baker, G.W.C., Walker, Marc, Bonyadi, Yeganeh, Mawby, Philip Andrew, Vavasour, Oliver James, Dai, Tian Xiang, Shah, Vishal Ajit, Li, Fan, Gammon, Peter Michael
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
An investigation into the impact of surface passivation techniques using metal-semiconductor interfaces
Bonyadi, Y., Gammon, P. M., Sharma, Y. K., Baker, G., Mawby, P. A.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
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