High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors
Charles, M., Baines, Y., Bavard, A., Bouveyron, R.
Published in Journal of crystal growth (01.02.2018)
Published in Journal of crystal growth (01.02.2018)
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Journal Article
Effect of disorder on the quantum coherence in mesoscopic wires
Niimi, Y, Baines, Y, Capron, T, Mailly, D, Lo, F-Y, Wieck, A D, Meunier, T, Saminadayar, L, Bäuerle, C
Published in Physical review letters (05.06.2009)
Published in Physical review letters (05.06.2009)
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Journal Article
Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique
Lehmann, J., Leroux, C., Reimbold, G., Charles, M., Torres, A., Morvan, E., Baines, Y., Ghibaudo, G., Bano, E.
Published in Proceedings of the 2015 International Conference on Microelectronic Test Structures (01.03.2015)
Published in Proceedings of the 2015 International Conference on Microelectronic Test Structures (01.03.2015)
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Conference Proceeding
Journal Article
The 2018 GaN power electronics roadmap
Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, Stephen, Palacios, Tomás, Piedra, Daniel, Plissonnier, M, Reddy, R, Sun, Min, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Zhang, Yuhao
Published in Journal of physics. D, Applied physics (25.04.2018)
Published in Journal of physics. D, Applied physics (25.04.2018)
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Journal Article
From epitaxy to converters topologies what issues for 200 mm GaN/Si?
Di Cioccio, L., Morvan, E., Charles, M., Perichon, P., Torres, A., Ayel, F., Bergogne, D., Baines, Y., Fayolle, M., Escoffier, R., Vandendaele, W., Barranger, D., Garnier, G., Mendizabal, L., Thollin, B., Plissonnier, M.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers
Biscarrat, J., Gwoziecki, R., Baines, Y., Buckley, J., Gillot, C., Vandendaele, W., Garnier, G., Charles, M., Plissonnier, M.
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
(Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs
Charles, Matthew, Kanyandekwe, Joël, Bos, Sandra, Baines, Yannick, Morvan, Erwan, Torres, Alphonse, Templier, François, Plissonnier, Marc
Published in ECS transactions (20.07.2018)
Published in ECS transactions (20.07.2018)
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Journal Article
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes
Vandendaele, W., Lorin, T., Gwoziecki, R., Baines, Y., Biscarrat, J., Jaud, M. A., Gillot, C., Charles, M., Plissonnier, M., Reimbold, G.
Published in 2017 47th European Solid-State Device Research Conference (ESSDERC) (01.09.2017)
Published in 2017 47th European Solid-State Device Research Conference (ESSDERC) (01.09.2017)
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Conference Proceeding
TCAD for gate stack optimization in pGaN Gate HEMT devices
Jaud, M.-A, Baines, Y., Charles, M., Morvan, E., Scheiblin, P., Torres, A., Plissonnier, M., Barbe, J.-C
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
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Conference Proceeding
Transport through side-coupled double quantum dots: from weak to strong interdot coupling
Baines, D Y, Meunier, T, Mailly, D, Wieck, A D, Bäuerle, C, Saminadayar, L, Cornaglia, Pablo S, Usaj, Gonzalo, Balseiro, C A, Feinberg, D
Published in arXiv.org (08.02.2012)
Published in arXiv.org (08.02.2012)
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Journal Article
Effect of Disorder on the Quantum Coherence in Mesoscopic Wires
Niimi, Y, Baines, Y, Capron, T, Mailly, D, F -Y Lo, Wieck, A D, Meunier, T, Saminadayar, L, Bauerle, C
Published in arXiv.org (03.06.2009)
Published in arXiv.org (03.06.2009)
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Paper
Journal Article
Low temperature dephasing in irradiated metallic wires
Capron, T, Niimi, Y, Baines, Y, Mailly, D, F -Y Lo, Melnikov, A, Wieck, A D, Saminadayar, L, Bäuerle, C
Published in arXiv.org (14.05.2008)
Published in arXiv.org (14.05.2008)
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Journal Article