Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors
Liu, Kai, Wang, Chong, Zhang, Kuo, Ma, Xiaohua, Bai, Junchun, Zheng, Xuefeng, Li, Ang, Hao, Yue
Published in Journal of applied physics (14.04.2024)
Published in Journal of applied physics (14.04.2024)
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Journal Article
Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method
Yue, Wenkai, Li, Peixian, Zhou, Xiaowei, Wang, Yanli, Wu, Jinxing, Bai, Junchun
Published in Nanomaterials (Basel, Switzerland) (05.08.2021)
Published in Nanomaterials (Basel, Switzerland) (05.08.2021)
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Journal Article
Effects of 4° misoriented sapphire substrate on optical property of green InGaN/GaN multiple quantum wells
Peng, Ruoshi, Bai, Junchun, Xu, Shengrui, Zhang, Jincheng, Du, Jinjuan, Zhao, Ying, Fan, Xiaomeng, Wu, Mei, Hao, Yue
Published in Superlattices and microstructures (01.01.2018)
Published in Superlattices and microstructures (01.01.2018)
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Journal Article
AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm
Zhang, Ran, Zheng, Gang, Cheng, Bin, Bai, Junchun, Lin, Xianqi, Xiao, Kai, Wang, Yukun, Hou, Qianyu, Sun, Wenhong
Published in Physica status solidi. A, Applications and materials science (01.10.2023)
Published in Physica status solidi. A, Applications and materials science (01.10.2023)
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Journal Article
Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability
Tao, Hongchang, Xu, Shengrui, Bai, Junchun, Zhang, Tao, Su, Huake, Zhang, Yachao, Liu, Xu, Gao, Yuan, Zhang, Jincheng, Ding, Ruixue, Hao, Yue
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Ultra-Low Gate Leakage Current and Enhanced Gate Reliability in p-GaN HEMT With AlN/GaN/AlN Double Barriers Cap Layer
Liu, Kai, Wang, Chong, Zheng, Xuefeng, Ma, Xiaohua, Zhang, Kuo, Zhang, Wentao, Bai, Junchun, Li, Ang, Hao, Yue
Published in IEEE electron device letters (01.10.2024)
Published in IEEE electron device letters (01.10.2024)
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Journal Article
AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217nm
Zhang, Ran, Zheng, Gang, Cheng, Bin, Bai, Junchun, Lin, Xianqi, Xiao, Kai, Wang, Yukun, Hou, Qianyu, Sun, Wenhong
Published in Physica status solidi. A, Applications and materials science (01.10.2023)
Published in Physica status solidi. A, Applications and materials science (01.10.2023)
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Journal Article
The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT
Liu, Kai, Wang, Runhao, Wang, Chong, Zheng, Xuefeng, Ma, Xiaohua, Bai, Junchun, Cheng, Bin, Liu, Ruiyu, Li, Ang, Zhao, Yaopeng, Hao, Yue
Published in Semiconductor science and technology (01.07.2022)
Published in Semiconductor science and technology (01.07.2022)
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Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT
Yao, Yixin, Zhang, Yachao, Zhang, Jincheng, Li, Yifan, Ma, Jinbang, Chen, Kai, Zhu, Jiaduo, Xu, Shengrui, Bai, Junchun, Cheng, Bin, Zhao, Shenglei, Hao, Yue
Published in Vacuum (01.10.2023)
Published in Vacuum (01.10.2023)
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Corrigendum: The influence of lightly-doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT (2022 Semicond. Sci. Technol. 37 075005)
Liu, Kai, Wang, Runhao, Wang, Chong, Zheng, Xuefeng, Ma, Xiaohua, Bai, Junchun, Cheng, Bin, Liu, Ruiyu, Li, Ang, Zhao, Yaopeng, Hao, Yue
Published in Semiconductor science and technology (01.08.2022)
Published in Semiconductor science and technology (01.08.2022)
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Journal Article
395 nm Light-Emitting Diode with 647 mW Output Power Realized Using a Double p-Type Aluminum Composition Gradient with Polarization-Induced Hole Doping
Yue, Wenkai, Li, Zhimin, Li, Peixian, Zhou, Xiaowei, Dong, Haichen, Wang, Yanli, Wu, Jinxing, Luo, Xiaoshun, Bai, Junchun
Published in Integrated ferroelectrics (02.01.2021)
Published in Integrated ferroelectrics (02.01.2021)
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