Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes
Kang, I. H., Kim, S. C., Bahng, W., Joo, S. J., Kim, N. K.
Published in IEEE transactions on power electronics (01.02.2012)
Published in IEEE transactions on power electronics (01.02.2012)
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Journal Article
Effects of rapid thermal annealing on nitrided gate oxide grown on 4H-SiC
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Journal Article
Conference Proceeding
Development and Distribution of Standard Reference Data on Physical and Chemical Properties of Plasma
Kim, C. G., Bahng, G. W., Ahn, J. C., Chae, K. S., Park, J. K., Yoon, J. S.
Published in Fusion science and technology (01.02.2009)
Published in Fusion science and technology (01.02.2009)
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Journal Article
Conference Proceeding
Rapid enlargement of SiC single crystal using a cone-shaped platform
Bahng, W, Kitou, Y, Nishizawa, S, Yamaguchi, H, Nasir Khan, M, Oyanagi, N, Nishino, S, Arai, K
Published in Journal of crystal growth (01.02.2000)
Published in Journal of crystal growth (01.02.2000)
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Journal Article
Improved low-frequency-noise characteristic of selectively hydrogen- pretreated quasi-enhancement HEMTs
KANG, I. H, KIM, S. C, BAHNG, W, KIM, N. K, SONG, J.-I
Published in Electronics letters (18.08.2005)
Published in Electronics letters (18.08.2005)
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Journal Article
Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer
Yamaguchi, H, Nishizawa, S, Bahng, W, Fukuda, K, Yoshida, S, Arai, K, Takano, Y
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode
Na, Moonkyong, Keum, Juyeon, Moon, Jeong Hyun, Kang, In Ho, Bahng, Wook
Published in ECS transactions (09.04.2018)
Published in ECS transactions (09.04.2018)
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Journal Article
(Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate
Kim, Hyoung Woo, Seok, Ogyun, Moon, Jeong Hyun, Bahng, Wook, Jo, Jungyol
Published in ECS transactions (09.04.2018)
Published in ECS transactions (09.04.2018)
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Journal Article
Etch pit investigation of free electron concentration controlled 4H-SiC
Kim, Hong-Yeol, Shin, Yun Ji, Kim, Jung Gon, Harima, Hiroshi, Kim, Jihyun, Bahng, Wook
Published in Journal of crystal growth (15.04.2013)
Published in Journal of crystal growth (15.04.2013)
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Journal Article
Device characteristics of the SOI LIGBT with dual-epi layers
Kim, H.W., Kim, S.C., Seo, K.S., Bahng, W., Kim, E.D.
Published in The 4th International Power Electronics and Motion Control Conference, 2004. IPEMC 2004 (2004)
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Published in The 4th International Power Electronics and Motion Control Conference, 2004. IPEMC 2004 (2004)
Conference Proceeding
A monolithic IGBT gate driver for intelligent power modules implemented in 0.8 μm high voltage (50 V) CMOS process
Park, J.M, Kim, E.D, Kim, S.C, Kim, N.K, Bahng, W, Song, G.H, Han, S.B
Published in Microelectronics (01.05.2001)
Published in Microelectronics (01.05.2001)
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Journal Article
Standard Uncertainty Evaluation for Dynamic Tensile Properties of Auto-Body Steel-Sheets
Huh, H., Jeong, S., Bahng, G. W., Chae, K. S., Kim, C. G.
Published in Experimental mechanics (01.07.2014)
Published in Experimental mechanics (01.07.2014)
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Journal Article
Recovery of superconductivity in water-decomposed Y-Ba-Cu-O superconductors by reheating
HWANG, N. M, BAHNG, G. W, PARK, Y. K, PARK, J. C, MOON, H. G, YOON, D. N
Published in Journal of materials science letters (01.05.1989)
Published in Journal of materials science letters (01.05.1989)
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Journal Article
Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel
Nasir Khan, M, Nishizawa, Shin-ichi, Bahng, Wook, Arai, Kazuo
Published in Journal of crystal growth (01.11.2000)
Published in Journal of crystal growth (01.11.2000)
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Journal Article